... for SRAM and memory blocks, covering array layout, periphery positioning, power grid design ... routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC, antenna, and ...
... for SRAM and memory blocks, covering array layout, periphery positioning, power grid design ... routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC, antenna, and ...
... for SRAM and memory blocks, covering array layout, periphery positioning, power grid design ... routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC, antenna, and ...
... for SRAM and memory blocks, covering array layout, periphery positioning, power grid design ... routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC, antenna, and ...
CA · On-site
· Manage the complete custom layout process for SRAM bitcell arrays, memory periphery, test ... design, routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC ...
CA · On-site
· Manage the complete custom layout process for SRAM bitcell arrays, memory periphery, test ... design, routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC ...
Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm). * Optimize SRAM designs for ...
Quick apply
Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm). * Optimize SRAM designs for ...
Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm). * Optimize SRAM designs for ...
Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm). * Optimize SRAM designs for ...
Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm). * Optimize SRAM designs for ...
Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm). * Optimize SRAM designs for ...
Experience in memory circuit design in one of ... SRAM, DRAM, Flash or emerging NVM technologies * Strong understanding of layout design including ...
Experience in memory circuit design in one of ... SRAM, DRAM, Flash or emerging NVM technologies * Strong understanding of layout design including ...
Experience in memory circuit design in one of ... SRAM, DRAM, Flash or emerging NVM technologies * Strong understanding of layout design including ...
Experience in memory circuit design in one of ... SRAM, DRAM, Flash or emerging NVM technologies * Strong understanding of layout design including ...
Layout Design Engineer
Santa Clara, CA · On-site
... SRAM bitcell arrays, memory periphery, test structures, and memory macros in advanced CMOS ... design, routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC ...
Layout Design Engineer
Santa Clara, CA · On-site
... SRAM bitcell arrays, memory periphery, test structures, and memory macros in advanced CMOS ... design, routing channels, and macro assembly. · Carry out, debug, and complete DRC, LVS, ERC ...
Define internal memory array architecture for redundancy, ECC compliance, and optimal speed with ... Analyze projected SRAM yield per device versus redundancy requirements * Run experiments using ...
Define internal memory array architecture for redundancy, ECC compliance, and optimal speed with ... Analyze projected SRAM yield per device versus redundancy requirements * Run experiments using ...
Define internal memory array architecture for redundancy, ECC compliance, and optimal speed with ... Analyze projected SRAM yield per device versus redundancy requirements * Run experiments using ...
Define internal memory array architecture for redundancy, ECC compliance, and optimal speed with ... Analyze projected SRAM yield per device versus redundancy requirements * Run experiments using ...
Memory Designer
San Diego, CA · On-site
$115K - $173K/yr
As part of the Memory IP team, you will take innovative and revolutionary ideas and turn them into ... Strong knowledge in CPU L1/L2 cache design, compiler SRAM/Register File architectures and advanced ...
Memory Designer
San Diego, CA · On-site
$115K - $173K/yr
As part of the Memory IP team, you will take innovative and revolutionary ideas and turn them into ... Strong knowledge in CPU L1/L2 cache design, compiler SRAM/Register File architectures and advanced ...
Experience in memory circuit design (SRAM/DRAM/FLASH/ROM/OPT, etc) * Experience in programming language (C/C++/Phyton) or scripting language (Perl/Python) * Ability to develop Verilog/Verilog-A ...
Experience in memory circuit design (SRAM/DRAM/FLASH/ROM/OPT, etc) * Experience in programming language (C/C++/Phyton) or scripting language (Perl/Python) * Ability to develop Verilog/Verilog-A ...
Design custom memory circuits and architectures tailored specifically for AI and HPC applications. * Lead efforts in Power, Performance, and Area (PPA) optimization for custom SRAM circuits to align ...
Design custom memory circuits and architectures tailored specifically for AI and HPC applications. * Lead efforts in Power, Performance, and Area (PPA) optimization for custom SRAM circuits to align ...
Design custom memory circuits and architectures tailored specifically for AI and HPC applications. * Lead efforts in Power, Performance, and Area (PPA) optimization for custom SRAM circuits to align ...
Design custom memory circuits and architectures tailored specifically for AI and HPC applications. * Lead efforts in Power, Performance, and Area (PPA) optimization for custom SRAM circuits to align ...
Staff Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Quick apply
Staff Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Senior Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Quick apply
Senior Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Staff Engineer, RTL Design
San Jose, CA · On-site
Staff Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Staff Engineer, RTL Design
San Jose, CA · On-site
Staff Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Staff Engineer, RTL Design
San Jose, CA · On-site
Staff Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Staff Engineer, RTL Design
San Jose, CA · On-site
Staff Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Senior Engineer, RTL Design
San Jose, CA · On-site
Senior Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Senior Engineer, RTL Design
San Jose, CA · On-site
Senior Engineer, RTL Design Overview The Memory Solutions Lab (MSL) is part of Samsung's Memory Business Unit, the industry's technology and volume leader in DRAM, NAND Flash, SRAM memory. MSL ...
Sram Memory Design information
See California salary details
$9.01 - $11.50
9% of jobs
$11.50 - $13.98
8% of jobs
$14.62 is the 25th percentile. Wages below this are outliers.
$13.98 - $16.46
28% of jobs
The median wage is $17.12 / hr.
$16.46 - $18.94
16% of jobs
$20.63 is the 75th percentile. Wages above this are outliers.
$18.94 - $21.42
20% of jobs
$21.42 - $23.90
9% of jobs
$23.90 - $26.38
4% of jobs
$26.38 - $28.86
1% of jobs
$28.86 - $31.34
1% of jobs
$31.34 - $33.82
1% of jobs
$33.82 - $36.30
2% of jobs
$9
$19
$36
How much do sram memory design jobs pay per hour?
What is the difference between Sram Memory Design vs DRAM Memory Design?
| Aspect | Sram Memory Design | DRAM Memory Design |
|---|---|---|
| Focus | Designing static RAM cells, optimizing speed and power | Designing dynamic RAM cells, focusing on density and refresh management |
| Work Environment | Semiconductor companies, hardware design labs | Memory chip manufacturers, integrated circuit design teams |
| Credentials | Electrical engineering, specialized in digital and memory design | Electrical engineering, with emphasis on memory architectures |
Sram Memory Design and DRAM Memory Design both involve memory chip development but differ in cell technology and application focus. Sram is faster and used for cache memory, while DRAM offers higher density for main memory. Understanding these differences helps in choosing the right design approach for specific hardware needs.
What is SRAM memory design?
What are some common challenges faced by engineers in SRAM Memory Design and how can they be addressed?
What are the key skills and qualifications needed to thrive as an SRAM Memory Design Engineer, and why are they important?

USG rating
8.4
Based on 57 frontline employees who took The Breakroom Quiz
50th of 535 rated manufacturers
Job description
Job Title: Sr. SRAM Layout Design Engineer
Location: Santa Clara, CA
Interview: Video Interview
Description:
SRAM
Mixed signal Analog not needed
Min 10years experience
What you will be doing:
· Manage the complete custom layout process for SRAM bitcell arrays, memory periphery, test structures, and memory macros in advanced CMOS technologies.
· Develop and improve floorplans for SRAM and memory blocks, covering array layout, periphery positioning, power grid design, routing channels, and macro assembly.
· Carry out, debug, and complete DRC, LVS, ERC, antenna, and associated physical verification checks with tools such as Calibre, ICV, or similar workflows.
· Support EM/IR review, power integrity, density/fill, DFM, dummy insertion, layout-dependent effects, and other requirements for tapeout.
· Collaborate with circuit designers to convert schematics into layouts, ensuring matching, symmetry, shielding, parasitic targets, and reliability constraints are maintained.
· Collaborate with PnR and integration teams to resolve top-level DRC/LVS, pin access, boundary, routing, power-grid, and macro-integration issues.
· Implement and advance layout methodology, checklists, reusable practices, and quality standards for consistent memory IP delivery.
· Collaborate with foundry, CAD, and methodology teams on rule interpretation, deck behavior, waivers, and advanced-node process constraints.
· Review layouts, mentor junior engineers, and help raise layout quality and execution rigor across the team.
What we need to see:
· Have a BSEE or equivalent experience
· 10+ years of custom IC layout experience, including 5+ years in SRAM, memory compiler, or full-custom memory IP layout.
· Hands-on participation in advanced CMOS technology initiatives, preferably concentrating on FinFET or GAA nodes at 5nm, 3nm, or smaller dimensions.
· Solid grasp of SRAM and memory layout principles.
· Extensive experience in Cadence Virtuoso applied to custom layout creation and assessment.
· Extensive experience in DRC/LVS debugging using Calibre, ICV, or similar physical verification tools.
· Experience with floorplanning, block-level routing, macro assembly, pin planning, boundary/interface management, and top-level physical verification.
· Direct familiarity with advanced-node layout limitations and layout-dependent phenomena, including LOD, density/fill, matching, symmetry, shielding, electromigration, IR drop, and DFM or similar expertise.
· Ability to work effectively with circuit build, physical build, integration, CAD, and foundry teams.
· Clear communication, strong ownership, good judgment, and the ability to mentor other engineers.
· Knowledge of layout automation or AI tools is a definite plus.
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About usg
Sourced by ZipRecruiter
Industry
Construction materials wholesalers
Company size
5,001 - 10,000 Employees
Headquarters location
Chicago, IL, US
Year founded
1902