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Director Memory Design Engineer Jobs (NOW HIRING)

Memory Design Engineer Location: Ontario, Canada Duration: 6+ Months with possible extension Qualification Required: * Typically requires minimum of 2 to 5 years of experience in Memory Design with ...

CPU Memory Design Engineer

Austin, TX · On-site

$122K - $232K/yr

The CPU Circuit Technology team is looking for a highly motivated and experienced individual to join our team as a CPU Memory Design Engineer. In this role, you will be responsible for designing ...

CPU Memory Design Engineer

Austin, TX · On-site

$164K - $269K/yr

The CPU Circuit Technology team is looking for a highly motivated and experienced individual to join our team as a CPU Memory Design Engineer. In this role, you will be responsible for designing ...

The CPU Circuit Technology team is looking for a highly motivated and experienced individual to join our team as a CPU Memory Design Engineer. In this role, you will be responsible for designing ...

The CPU Circuit Technology team is looking for a highly motivated and experienced individual to join our team as a CPU Memory Design Engineer. In this role, you will be responsible for designing ...

As a Design Engineer at Micron Technology, Inc., you will be responsible for designing and analyzing digital and analog circuits used in the development of memory products. We are engaged in ...

Memory Design Engineer, HBM

Richardson, TX · On-site

$183K/yr

The Memory Design Engineer develops and optimizes digital and analog circuits for advanced DRAM products. This role focuses on circuit design, simulation, validation, and multi-functional ...

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Director Memory Design Engineer information

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$37K

$135.8K

$243K

How much do director memory design engineer jobs pay per year?

As of Jun 21, 2026, the average yearly pay for director memory design engineer in the United States is $135,763.00, according to ZipRecruiter salary data. Most workers in this role earn between $109,500.00 and $163,000.00 per year, depending on experience, location, and employer.
More about Director Memory Design Engineer jobs
What cities are hiring for Director Memory Design Engineer jobs? Cities with the most Director Memory Design Engineer job openings:
What are the most commonly searched types of Memory Design Engineer jobs? The most popular types of Memory Design Engineer jobs are:
What states have the most Director Memory Design Engineer jobs? States with the most job openings for Director Memory Design Engineer jobs include:
Infographic showing various Director Memory Design Engineer job openings in the United States as of June 2026, with employment types broken down into 32% Full Time, 65% Part Time, and 3% Temporary. Highlights an 87% Physical, 5% Hybrid, and 8% Remote job distribution, with an average salary of $135,763 per year, or $65.3 per hour.
Memory Design Engineer

Memory Design Engineer

Resource Point LLC

Troy, MI • On-site

Contractor

Posted 27 days ago


Job description

Looking for W-2 CANDIDATES ONLY who are authorized to work in the United States without the need for sponsorship. H-1B Transfers AND CORP-TO-CORP Candidates WILL NOT BE CONSIDERED for this position

Job Title: Memory Design Engineer

Location: Ontario, Canada

Duration: 6+ Months with possible extension

Qualification Required:

  • Typically requires minimum of 2 to 5  years of experience in Memory Design with mainstream SRAM tools
  • Bachelors / Master Degree in E&E and E&C

Roles and Responsibilities:

  • Good understanding of SRAM architecture, Critical Path Modelling, Full Cut Analysis and Monte Carlo Simulations.
  • Exposure to full embedded memory design flow: Architecture, circuit design, physical implementation, compiler automation, characterization, timing and model generation.
  • Good experience in design verification: Sense amplifier analysis, self-time analysis and marginality analysis.
  • Good exposure to validation of the characterized data.
  • Strong knowledge of physical implementation impact on circuit performance.
  • Experience with the most advanced technology nodes up to 28nm and below.