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Graduate Memory Design Engineer Jobs (NOW HIRING)

Resource Point LLC

Memory Design Engineer

Troy, MI · On-site

Memory Design Engineer Location: Ontario, Canada Duration: 6+ Months with possible extension Qualification Required: * Typically requires minimum of 2 to 5 years of experience in Memory Design with ...

Arm Limited

Memory Design Engineer

Austin, TX · On-site

$130K - $176K/yr

Contribute in all parts of the memory development flow, starting at design specification, circuit ... Master's in Electrical Engineering, Computer Engineering, or other relevant technical fields with ...

ARM

Memory Design Engineer

Austin, TX · On-site

$130K - $176K/yr

Contribute in all parts of the memory development flow, starting at design specification, circuit ... Master's in Electrical Engineering, Computer Engineering, or other relevant technical fields with ...

ARM

Memory Design Engineer

Austin, TX · Hybrid

$130K - $176K/yr

Contribute in all parts of the memory development flow, starting at design specification, circuit ... Master's in Electrical Engineering, Computer Engineering, or other relevant technical fields with ...

Talanto

About the Role • • • • • 's CPU Circuit Technology team is seeking a highly motivated CPU Memory Design Engineer to help develop the next generation of high-performance, power-efficient ...

Talanto

CPU Circuit Memory Design Engineer

Austin, TX · On-site

About the Role • • • • • 's CPU Circuit Technology team is seeking a highly motivated CPU Memory Design Engineer to help develop the next generation of high-performance, power-efficient ...

Intel

CPU Circuit Memory Design Engineer

Austin, TX

About the Role Intel's CPU Circuit Technology team is seeking a highly motivated CPU Memory Design Engineer to help develop the next generation of high-performance, power-efficient processors. In ...

Micron

Memory Design Engineer, HBM

Richardson, TX · On-site

As a Design Engineer at Micron Technology, Inc., you will be responsible for designing and analyzing digital and analog circuits used in the development of memory products. We are engaged in ...

Micron

Memory Design Engineer, HBM

Richardson, TX · On-site

$183K/yr

The Memory Design Engineer develops and optimizes digital and analog circuits for advanced DRAM products. This role focuses on circuit design, simulation, validation, and multi-functional ...

Micron Technology, Inc

DRAM Design Engineer

Boise, ID · On-site

Job Summary As a Design Engineer at Micron Technology, Inc., you will be responsible for designing ... You will provide high‑quality, efficient, and reliable memory solutions that optimize ...

Intel

Memory Circuit Design Engineer

Austin, TX

About the Role Intel's CPU Circuit Technology team is seeking a highly motivated Memory Circuit Design Engineer to drive the design and development of advanced memory circuits for future CPU and SoC ...

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Graduate Memory Design Engineer information

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How much do graduate memory design engineer jobs pay per year?

As of Sep 11, 2026, the average yearly pay for graduate memory design engineer in the United States is $141,351.00, according to ZipRecruiter salary data. Most workers in this role earn between $95,000.00 and $158,000.00 per year, depending on experience, location, and employer.

What are popular job titles related to Graduate Memory Design Engineer jobs?

For Graduate Memory Design Engineer jobs, the most frequently searched job titles are:

Infographic showing various Graduate Memory Design Engineer job openings in the United States as of June 2026, with employment types broken down into 82% Full Time, 17% Part Time, and 1% Temporary. Highlights an 95% Physical, 1% Hybrid, and 4% Remote job distribution, with an average salary of $141,351 per year, or $68 per hour.

Memory Design Engineer

Troy, MI • On-site

Resource Point LLC
IT Services • 51 - 200 employees
Learn more about Resource Point LLCexternal

Contractor

Re-posted 19 days ago

Job description

Looking for W-2 CANDIDATES ONLY who are authorized to work in the United States without the need for sponsorship. H-1B Transfers AND CORP-TO-CORP Candidates WILL NOT BE CONSIDERED for this position

Job Title: Memory Design Engineer

Location: Ontario, Canada

Duration: 6+ Months with possible extension

Qualification Required:

  • Typically requires minimum of 2 to 5  years of experience in Memory Design with mainstream SRAM tools
  • Bachelors / Master Degree in E&E and E&C

Roles and Responsibilities:

  • Good understanding of SRAM architecture, Critical Path Modelling, Full Cut Analysis and Monte Carlo Simulations.
  • Exposure to full embedded memory design flow: Architecture, circuit design, physical implementation, compiler automation, characterization, timing and model generation.
  • Good experience in design verification: Sense amplifier analysis, self-time analysis and marginality analysis.
  • Good exposure to validation of the characterized data.
  • Strong knowledge of physical implementation impact on circuit performance.
  • Experience with the most advanced technology nodes up to 28nm and below.