Design and qualify high-voltage GaN power devices integrated in high performance and high ... Perform device/process simulations and device layout for GaN power devices. * Assignments will ...
Design and qualify high-voltage GaN power devices integrated in high performance and high ... Perform device/process simulations and device layout for GaN power devices. * Assignments will ...
Staff Device Engineer
San Jose, CA · On-site
Design and qualify high-voltage GaN power devices integrated in high performance and high ... Perform device/process simulations and device layout for GaN power devices. * Assignments will ...
Staff Device Engineer
San Jose, CA · On-site
Design and qualify high-voltage GaN power devices integrated in high performance and high ... Perform device/process simulations and device layout for GaN power devices. * Assignments will ...
... GaN Transistor Modeling Engineer to join our Modeling Team. The successful candidate will be ... Key Responsibilities * Device Characterization: Define on-wafer and packaged device ...
... GaN Transistor Modeling Engineer to join our Modeling Team. The successful candidate will be ... Key Responsibilities * Device Characterization: Define on-wafer and packaged device ...
... GaN Transistor Modeling Engineer to join our Modeling Team. The successful candidate will be ... Key Responsibilities * Device Characterization: Define on-wafer and packaged device ...
... GaN Transistor Modeling Engineer to join our Modeling Team. The successful candidate will be ... Key Responsibilities * Device Characterization: Define on-wafer and packaged device ...
We are seeking a Test Engineer - SiC & GaN Power Devices to join our fast-growing, collaborative ... Working under the direction of device engineers and senior members of the device team, this role ...
We are seeking a Test Engineer - SiC & GaN Power Devices to join our fast-growing, collaborative ... Working under the direction of device engineers and senior members of the device team, this role ...
Staff Device Engineer San Jose, CA Responsibilities * Participate in the development of world-class ... Hands-on experience with high-voltage wide-bandgap technologies, including GaN and SiC power device ...
Staff Device Engineer San Jose, CA Responsibilities * Participate in the development of world-class ... Hands-on experience with high-voltage wide-bandgap technologies, including GaN and SiC power device ...
Test Engineer - SiC & GaN Power Devices
Torrance, CA · On-site
$90K - $130K/yr
We are seeking a Test Engineer - SiC & GaN Power Devices to join our fast-growing, collaborative ... Working under the direction of device engineers and senior members of the device team, this role ...
Test Engineer - SiC & GaN Power Devices
Torrance, CA · On-site
$90K - $130K/yr
We are seeking a Test Engineer - SiC & GaN Power Devices to join our fast-growing, collaborative ... Working under the direction of device engineers and senior members of the device team, this role ...
RF Device Design and Development (30%) * Design and optimize GaN RF devices including discrete ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...
RF Device Design and Development (30%) * Design and optimize GaN RF devices including discrete ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...
RF Device Design and Development (30%) * Design and optimize GaN RF devices including discrete ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...
RF Device Design and Development (30%) * Design and optimize GaN RF devices including discrete ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...
Device Engineer
Phoenix, AZ · On-site
$72K - $93K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations: US ...
Device Engineer
Phoenix, AZ · On-site
$72K - $93K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations: US ...
Device Modeling Engineer
San Jose, CA · On-site
... GaN) technologies across multiple voltage and power ranges Create compact models suitable for ... with: o Device engineering o IC design and layout teams o Product and test engineering o ...
Device Modeling Engineer
San Jose, CA · On-site
... GaN) technologies across multiple voltage and power ranges Create compact models suitable for ... with: o Device engineering o IC design and layout teams o Product and test engineering o ...
Device Engineer
Santa Clara, CA · On-site
$85K - $110K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations:US ...
Device Engineer
Santa Clara, CA · On-site
$85K - $110K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations:US ...
... and WBG (GaN) technologies across multiple voltage and power ranges • Create compact models ... with: o Device engineering o IC design and layout teams o Product and test engineering o ...
... and WBG (GaN) technologies across multiple voltage and power ranges • Create compact models ... with: o Device engineering o IC design and layout teams o Product and test engineering o ...
Device Engineer
Phoenix, AZ · On-site
$72K - $93K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations:US ...
Device Engineer
Phoenix, AZ · On-site
$72K - $93K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations:US ...
Device Engineer
Hillsboro, OR · On-site
$79K - $102K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations:US ...
Device Engineer
Hillsboro, OR · On-site
$79K - $102K/yr
You will work closely with a team of engineers to push the boundaries of device performance, power ... Shift 1 (United States of America) Primary Location: US, Arizona, Phoenix Additional Locations:US ...
Device Modeling Engineer
San Jose, CA · On-site
... and WBG (GaN) technologies across multiple voltage and power ranges • Create compact models ... with: o Device engineering o IC design and layout teams o Product and test engineering o ...
Device Modeling Engineer
San Jose, CA · On-site
... and WBG (GaN) technologies across multiple voltage and power ranges • Create compact models ... with: o Device engineering o IC design and layout teams o Product and test engineering o ...
RF/mm-Wave GaN Power Amplifier Design Engineer
$160K - $225K/yr
Familiarity with RF GaN device physics, including trapping and thermals, and transistor models ... PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave ...
Quick apply
RF/mm-Wave GaN Power Amplifier Design Engineer
$160K - $225K/yr
Familiarity with RF GaN device physics, including trapping and thermals, and transistor models ... PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave ...
RF/mm-Wave GaN Power Amplifier Design Engineer
Atlanta, GA · On-site
$160K - $225K/yr
Familiarity with RF GaN device physics, including trapping and thermals, and transistor models ... PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave ...
RF/mm-Wave GaN Power Amplifier Design Engineer
Atlanta, GA · On-site
$160K - $225K/yr
Familiarity with RF GaN device physics, including trapping and thermals, and transistor models ... PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave ...
Power Device Design & Development (30%) * Design and optimize GaN power devices (HEMTs, Diodes ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...
Power Device Design & Development (30%) * Design and optimize GaN power devices (HEMTs, Diodes ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...
A GaN Process Development Engineer is responsible for direct hands-on development of GaN unit ... Correlation/analysis of Device output electrical data to process/material input data and ...
A GaN Process Development Engineer is responsible for direct hands-on development of GaN unit ... Correlation/analysis of Device output electrical data to process/material input data and ...
2Nd Shift Gan Device Engineer information
See salary details
$18.75 - $23.21
10% of jobs
$25.52 is the 25th percentile. Wages below this are outliers.
$23.21 - $27.67
28% of jobs
The median wage is $31.44 / hr.
$27.67 - $32.12
14% of jobs
$32.12 - $36.58
5% of jobs
$36.58 - $41.04
13% of jobs
$42.53 is the 75th percentile. Wages above this are outliers.
$41.04 - $45.50
16% of jobs
$45.50 - $49.96
7% of jobs
$49.96 - $54.41
1% of jobs
$54.41 - $58.87
0% of jobs
$58.87 - $63.33
3% of jobs
$63.33 - $67.79
3% of jobs
$18
$36
$67
How much do 2nd shift gan device engineer jobs pay per hour?
As of Aug 2, 2026, the average hourly pay for 2nd shift gan device engineer in the United States is $36.77, according to ZipRecruiter salary data. Most workers in this role earn between $25.00 and $44.23 per hour, depending on experience, location, and employer.
What is the difference between 2Nd Shift Gan Device Engineer vs 2Nd Shift Power Device Engineer?
| Aspect | 2Nd Shift Gan Device Engineer | 2Nd Shift Power Device Engineer |
|---|---|---|
| Credentials | Bachelor's in Electrical Engineering or related; experience with semiconductor fabrication | Bachelor's in Electrical or Power Engineering; experience with power electronics |
| Work Environment | Semiconductor fabrication labs, R&D facilities | Power electronics manufacturing, testing labs |
| Industry Usage | Semiconductor industry, RF and high-frequency applications | Power electronics, energy systems, industrial equipment |
The 2Nd Shift Gan Device Engineer focuses on gallium nitride (GaN) semiconductor devices used in high-frequency and RF applications, while the 2Nd Shift Power Device Engineer specializes in power semiconductor devices for energy and industrial applications. Both roles require similar technical credentials and work in manufacturing or R&D environments, but they serve different industry segments and device types.
More about 2Nd Shift Gan Device Engineer jobs
What cities are hiring for 2Nd Shift Gan Device Engineer jobs? Cities with the most 2Nd Shift Gan Device Engineer job openings:
What are the most commonly searched types of Gan Device Engineer jobs? The most popular types of Gan Device Engineer jobs are:
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Job description
Responsibilities
- Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).
- Perform device/process simulations and device layout for GaN power devices.
- Assignments will include power device creation, fabrication and full characterization, and issuing technical reports.
- Evaluate electrical / thermal performance and reliability of GaN power devices.
- Prior experience in Si power device development is a plus.
- Interact with other departments for best use of Company’s technologies and to support key customer requirements.
Requirements
- B. Sc degree in Electrical Engineering with 8 years’ working experience or
- M. Sc degree in Electrical Engineering with 6 years’ working experience or
- Ph. D degree in Electrical Engineering with 3 years’ working experience
- Proven track record of independently designing and taking into volume production of high-voltage GaN power devices
- Sound understanding of semiconductor device physics, especially WBG
- Proficient in TCAD simulation and CADENCE layout tools
- Hands-on experience with high-voltage testing and data acquisition systems
- Strong communication and collaboration skills
About Power Integrations
Sourced by ZipRecruiter
Industry
Semiconductor and electronic component manufacturing
Company size
501 - 1,000 Employees
Headquarters location
San Jose, CA, US
Year founded
1998