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Internship Gan Device Engineer Jobs (NOW HIRING)

NCSU

CLAWS III-N RF Integration Engineer

Raleigh, NC

RF Device Design and Development (30%) * Design and optimize GaN RF devices including discrete ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...

KBR, Inc.

Semiconductor Device Engineer

Beavercreek, OH · On-site

Title: Semiconductor Device Engineer Belong. Connect. Grow. with KBR! KBR's National Security ... Experience: 4+ years of hands-on cleanroom experience (can include graduate research or internships ...

NCSU

CLAWS III-N Power Integration Engineer

Raleigh, NC · On-site

$101K - $136K/yr

Power Device Design & Development (30%) * Design and optimize GaN power devices (HEMTs, Diodes ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...

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How much do internship gan device engineer jobs pay per hour?

As of Aug 2, 2026, the average hourly pay for internship gan device engineer in the United States is $19.31, according to ZipRecruiter salary data. Most workers in this role earn between $16.11 and $20.91 per hour, depending on experience, location, and employer.

What is an Internship GaN Device Engineer?

An Internship GaN Device Engineer is a student or recent graduate who assists in the development, testing, and characterization of Gallium Nitride (GaN) semiconductor devices. These engineers work under supervision to support projects related to power electronics, RF applications, or optoelectronic devices using GaN technology. Their responsibilities often include device fabrication, measurement, data analysis, and reporting, providing hands-on experience in semiconductor engineering. This internship helps build technical skills and industry knowledge, often serving as a pathway to a full-time engineering role.

What types of projects and learning opportunities can I expect as an Internship GaN Device Engineer?

As an Internship GaN Device Engineer, you will typically work on hands-on projects related to the design, fabrication, and testing of Gallium Nitride (GaN) semiconductor devices. You may collaborate closely with senior engineers to analyze device performance, troubleshoot process challenges, and assist with data collection for ongoing research and development. This role offers valuable exposure to cutting-edge technologies in power electronics, as well as opportunities to develop technical skills in semiconductor characterization and laboratory equipment. Interns often participate in team meetings and may present findings, gaining experience in both technical communication and teamwork.

What are the key skills and qualifications needed to thrive as an Internship GaN Device Engineer, and why are they important?

To thrive as an Internship GaN Device Engineer, you need a solid background in electrical engineering or materials science, with knowledge of semiconductor physics and device fabrication. Familiarity with simulation software (such as TCAD), laboratory measurement tools, and cleanroom processes is typically expected. Strong problem-solving skills, attention to detail, and the ability to collaborate effectively in a team environment set candidates apart. These skills and qualifications are crucial for contributing to the development and optimization of high-performance GaN devices in a research or industrial setting.
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Internship Gan Device Engineer jobs near you
Infographic showing various Internship Gan Device Engineer job openings in the United States as of July 2026, with employment types broken down into 77% Full Time, 14% Part Time, and 9% Contract. Highlights an 92% Physical, 2% Hybrid, and 6% Remote job distribution, with an average salary of $40,174 per year, or $19.3 per hour.

Staff Device Engineer

Power Integrations

San Jose, CA

Full-time

Re-posted 25 days ago

Job description

Responsibilities
  • Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).
  • Perform device/process simulations and device layout for GaN power devices.
  • Assignments will include power device creation, fabrication and full characterization, and issuing technical reports.
  • Evaluate electrical / thermal performance and reliability of GaN power devices.
  • Prior experience in Si power device development is a plus.
  • Interact with other departments for best use of Company’s technologies and to support key customer requirements.
 
Requirements
  • B. Sc degree in Electrical Engineering with 8 years’ working experience or
  • M. Sc degree in Electrical Engineering with 6 years’ working experience or
  • Ph. D degree in Electrical Engineering with 3 years’ working experience
  • Proven track record of independently designing and taking into volume production of high-voltage GaN power devices
  • Sound understanding of semiconductor device physics, especially WBG
  • Proficient in TCAD simulation and CADENCE layout tools
  • Hands-on experience with high-voltage testing and data acquisition systems
  • Strong communication and collaboration skills

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