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Overnight Gan Device Engineer Jobs (NOW HIRING)

Device Engineer

Somerville, MA · On-site

$120 - $160/hr

Role Overview Vertical Semi's engineering team works across the full lifecycle of our vertical GaN ... This could mean device modeling and simulation, on‑wafer characterization, process integration ...

Initiates the internal assembly design of the GaN device, BOM & Process flow in a target package ... Works with Simulation engineer for thermal and thermo-mechanical stress simulations as part of risk ...

RF Device Design and Development (30%) * Design and optimize GaN RF devices including discrete ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...

About the Role The GaN Epi Development Engineer will join IQE's Technology Group and play a key ... Develop epitaxial growth processes for GaN-based device structures. * Work with GaN MOCVD reactors ...

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Overnight Gan Device Engineer information

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$59K

$137.3K

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How much do overnight gan device engineer jobs pay per year?

As of Aug 24, 2026, the average yearly pay for overnight gan device engineer in the United States is $137,309.00, according to ZipRecruiter salary data. Most workers in this role earn between $101,500.00 and $196,000.00 per year, depending on experience, location, and employer.

What is the difference between Overnight Gan Device Engineer vs Gan Device Engineer?

AspectOvernight Gan Device EngineerGan Device Engineer
Required CredentialsBachelor's or Master's in Electrical Engineering, specialized in power devicesBachelor's or Master's in Electrical Engineering, with focus on power electronics
Work EnvironmentShift-based, laboratory and manufacturing settings, often overnight shiftsStandard office or lab hours, primarily research and development
Industry UsageManufacturing plants, power electronics companies, semiconductor industryResearch institutions, semiconductor companies, product development

The main difference between an Overnight Gan Device Engineer and a Gan Device Engineer lies in their work schedules and environments. The Overnight Gan Device Engineer typically works overnight shifts in manufacturing or lab settings, focusing on production and testing. In contrast, the Gan Device Engineer usually works standard hours, concentrating on research, design, and development. Both roles require similar technical skills and educational backgrounds, but their work hours and focus areas differ.

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Infographic showing various Overnight Gan Device Engineer job openings in the United States as of August 2026, with employment types broken down into 94% Full Time, 2% Part Time, and 4% Contract. Highlights an 85% Physical, 5% Hybrid, and 10% Remote job distribution, with an average salary of $137,309 per year, or $66 per hour.

$120 - $160/hr

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Re-posted 4 days ago


Job description

Company Description

Vertical Semiconductor, a venture-backed MIT spin‑out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI.

Role Overview

Vertical Semi's engineering team works across the full lifecycle of our vertical GaN power devices, from architecture and process integration through modeling, characterization, and reliability. This posting is for engineers with a background in wide‑bandgap (WBG) power semiconductors, including GaN, SiC, or related technologies, at any career stage.

Where you spend most of your time will depend on your background and where the team needs help most. This could mean device modeling and simulation, on‑wafer characterization, process integration, or failure analysis and reliability work.

If you have hands‑on experience with wide‑bandgap power devices and want to build a new device technology from the ground up, we want to hear from you.

Potential Responsibilities
  • Support device architecture, process integration, and technology development for our vertical GaN power devices
  • Run device modeling and simulation to inform design and process decisions
  • Perform on‑wafer and discrete device characterization, including DC, CV, and dynamic testing
  • Support failure analysis and reliability investigations for wide‑bandgap power devices
  • Develop and review GDS layouts and test structures to support device learning and validation
  • Collaborate with epitaxy, process, packaging, and reliability teams on cross‑functional device work
  • Build and run application evaluation boards to connect device behavior to system‑level performance
  • Keep clear records of experiments, test data, and process learnings
Required Qualifications
  • B.S., M.S., or Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field
  • Experience with GaN, SiC, or other wide‑bandgap semiconductors, ideally in power device applications
  • Hands‑on experience in at least one of: device characterization, process integration, or device modeling and simulation
  • Comfortable working with data analysis tools such as Python or MATLAB
  • Strong communication skills and the ability to work across disciplines
Location, Schedule & Working Conditions

Vertical Semiconductor's team is based on‑site at our office at Greentown Labs in Somerville, MA.

Values & Culture Fit

Vertical Semiconductor is seeking an engineer who is not only capable of accelerating the technical vision of the company but is also willing to get involved in the day‑to‑day execution of a startup. The ideal candidate is someone who enjoys tackling complex engineering challenges, is comfortable with a hands‑on approach in a collaborative arena, and thrives in a startup environment where they can make an immediate impact. We value integrity, initiative, problem‑solving, creativity, and a passion for creating transformative technology that can change industries and improve the world.

Title and Compensation

We offer a competitive salary and comprehensive benefits package with participation in our stock option program that is commensurate with candidates' experience and impact. Titles will also reflect candidates' experience.

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