ZipRecruiter

Log In

1

Overnight Gan Device Engineer Jobs (NOW HIRING)

NCSU

CLAWS III-N RF Integration Engineer

Raleigh, NC

RF Device Design and Development (30%) * Design and optimize GaN RF devices including discrete ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...

NCSU

CLAWS III-N Power Integration Engineer

Raleigh, NC

$101K - $136K/yr

Power Device Design & Development (30%) * Design and optimize GaN power devices (HEMTs, Diodes ... Work with process engineers and R&D partners to drive technology improvements. * Collaborate with ...

next page

Showing results 1-20

All JobsGan Device Engineer JobsOvernight Gan Device Engineer Jobs

Overnight Gan Device Engineer information

See salary details

$59K

$137.3K

$196.5K

How much do overnight gan device engineer jobs pay per year?

As of Aug 2, 2026, the average yearly pay for overnight gan device engineer in the United States is $137,309.00, according to ZipRecruiter salary data. Most workers in this role earn between $101,500.00 and $196,000.00 per year, depending on experience, location, and employer.

What is the difference between Overnight Gan Device Engineer vs Gan Device Engineer?

AspectOvernight Gan Device EngineerGan Device Engineer
Required CredentialsBachelor's or Master's in Electrical Engineering, specialized in power devicesBachelor's or Master's in Electrical Engineering, with focus on power electronics
Work EnvironmentShift-based, laboratory and manufacturing settings, often overnight shiftsStandard office or lab hours, primarily research and development
Industry UsageManufacturing plants, power electronics companies, semiconductor industryResearch institutions, semiconductor companies, product development

The main difference between an Overnight Gan Device Engineer and a Gan Device Engineer lies in their work schedules and environments. The Overnight Gan Device Engineer typically works overnight shifts in manufacturing or lab settings, focusing on production and testing. In contrast, the Gan Device Engineer usually works standard hours, concentrating on research, design, and development. Both roles require similar technical skills and educational backgrounds, but their work hours and focus areas differ.

More about Overnight Gan Device Engineer jobs
What cities are hiring for Overnight Gan Device Engineer jobs? Cities with the most Overnight Gan Device Engineer job openings:
What are the most commonly searched types of Gan Device Engineer jobs? The most popular types of Gan Device Engineer jobs are:
What states have the most Overnight Gan Device Engineer jobs? States with the most job openings for Overnight Gan Device Engineer jobs include:
What job categories do people searching Overnight Gan Device Engineer jobs look for? The top searched job categories for Overnight Gan Device Engineer jobs are:
Overnight Gan Device Engineer jobs near you
Infographic showing various Overnight Gan Device Engineer job openings in the United States as of July 2026, with employment types broken down into 75% Full Time, 18% Part Time, and 7% Contract. Highlights an 92% Physical, 2% Hybrid, and 6% Remote job distribution, with an average salary of $137,309 per year, or $66 per hour.

Staff Device Engineer

Power Integrations

San Jose, CA

Full-time

Re-posted 25 days ago

Job description

Responsibilities
  • Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).
  • Perform device/process simulations and device layout for GaN power devices.
  • Assignments will include power device creation, fabrication and full characterization, and issuing technical reports.
  • Evaluate electrical / thermal performance and reliability of GaN power devices.
  • Prior experience in Si power device development is a plus.
  • Interact with other departments for best use of Company’s technologies and to support key customer requirements.
 
Requirements
  • B. Sc degree in Electrical Engineering with 8 years’ working experience or
  • M. Sc degree in Electrical Engineering with 6 years’ working experience or
  • Ph. D degree in Electrical Engineering with 3 years’ working experience
  • Proven track record of independently designing and taking into volume production of high-voltage GaN power devices
  • Sound understanding of semiconductor device physics, especially WBG
  • Proficient in TCAD simulation and CADENCE layout tools
  • Hands-on experience with high-voltage testing and data acquisition systems
  • Strong communication and collaboration skills

Apply