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Internship Gan Device Engineer Jobs in Minnesota

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Internship Gan Device Engineer information

What is an internship GaN device engineer?

An Internship GaN Device Engineer is a student or recent graduate who assists in the development, testing, and characterization of Gallium Nitride (GaN) semiconductor devices. These engineers work under supervision to support projects related to power electronics, RF applications, or optoelectronic devices using GaN technology. Their responsibilities often include device fabrication, measurement, data analysis, and reporting, providing hands-on experience in semiconductor engineering. This internship helps build technical skills and industry knowledge, often serving as a pathway to a full-time engineering role.

What are the key skills and qualifications needed to thrive as an internship GaN device engineer?

To thrive as an Internship GaN Device Engineer, you need a solid background in electrical engineering or materials science, with knowledge of semiconductor physics and device fabrication. Familiarity with simulation software (such as TCAD), laboratory measurement tools, and cleanroom processes is typically expected. Strong problem-solving skills, attention to detail, and the ability to collaborate effectively in a team environment set candidates apart. These skills and qualifications are crucial for contributing to the development and optimization of high-performance GaN devices in a research or industrial setting.

What types of projects and learning opportunities can I expect as an internship GaN device engineer?

As an Internship GaN Device Engineer, you will typically work on hands-on projects related to the design, fabrication, and testing of Gallium Nitride (GaN) semiconductor devices. You may collaborate closely with senior engineers to analyze device performance, troubleshoot process challenges, and assist with data collection for ongoing research and development. This role offers valuable exposure to cutting-edge technologies in power electronics, as well as opportunities to develop technical skills in semiconductor characterization and laboratory equipment. Interns often participate in team meetings and may present findings, gaining experience in both technical communication and teamwork.

What are popular job titles related to Internship Gan Device Engineer jobs in Minnesota?

For Internship Gan Device Engineer jobs in Minnesota, the most frequently searched job titles are:

What job categories do people searching Internship Gan Device Engineer jobs in Minnesota look for?

The top searched job categories for Internship Gan Device Engineer jobs in Minnesota are:

What cities in Minnesota are hiring for Internship Gan Device Engineer jobs?

Cities in Minnesota with the most Internship Gan Device Engineer job openings:

Infographic showing various Internship Gan Device Engineer job openings in Minnesota as of August 2026, with employment types broken down into 90% Full Time, 5% Part Time, 4% Contract, and 1% Nights. Highlights an 85% Physical, 6% Hybrid, and 9% Remote job distribution.

Principal GaN Technology Development Engineer

Polar Semiconductor, LLC

Bloomington, MN • On-site

$125 - $165/hr

Other

Medical, Dental, Vision, Life, Retirement, PTO

Posted 4 days ago


Job description

Job Summary

Contribute to the development, transfer, optimization, and documentation of the overall process flow and macro modules required to fabricate reliable, manufacturable devices on GaN on Silicon (HEMT) that meet parametric and performance goals. Characterize, evaluate, and document semiconductor devices to ensure reliability and performance to quality standards. Evaluate new opportunities for development and/or transfer of new semiconductor technology and processes.

Duties and Responsibilities
  • Set up and perform process and device simulations to determine initial process parameters, capabilities, and direction for optimization of new process flows.
  • Design and perform experiments and analyze the results to determine the process sequences and parameters which will yield the target device parameters, using the results of the process simulations or initial test lots as a starting point.
  • Analyze data (electrical, in-process measurement or visual inspection) from the fabrication of test lots to determine which parameters require additional optimization.
  • Work with Process Engineering to develop, characterize, and optimize process modules.
  • Support the processing of the initial test chip and transfer lots fabricated with the new process to identify and correct any problem areas and work to achieve first-pass success.
  • Provide inputs to and work with Device Engineers to develop layout rules for the process being developed, using equipment specifications and experimental data.
  • Recommend test structures for and contribute to the layout of test chip mask sets to aid in developing the new process and evaluating specific process-dependencies of device parameters.
  • Provide weekly, monthly, and quarterly development updates to upper management and external customers.
  • Support company initiatives such as quality, safety, and environmental management, CQI, 5S, yield management, and cost containment.
  • Perform other duties as required.
Knowledge, Skills, and Abilities
  • Strong process integration knowledge of GaN on silicon HEMT power devices.
  • Strong knowledge of semiconductor device physics, especially III-V nitrides.
  • Working knowledge of key process modules (Photo, Etch, Thin Films, CMP, MOCVD, etc.).
  • Broad knowledge of GaN market trends and new opportunity evaluation experience preferred.
  • Process integration experience in CMOS/BCDMOS or discrete IGBTs/MOSFETs a plus.
  • Experience in process flow design to achieve manufacturability metrics and meet electrical test targets.
  • Experience with and understanding of electrical test data and its correlation to process and cross-sectional data.
  • Experience interpreting failure analysis results and familiarity with failure analysis techniques.
  • Experience with power packaging including assembly and reliability issues.
  • Experience in backend (BGBM, STM, etc.) processes.
  • Experience in development of process, technology, and design FMEAs.
  • Skills in DoE design and data analysis tools (JMP, Spotfire).
  • Reading and interpretation of design layouts.
  • Abilities working with and interpreting information/data between design and process teams.
  • Driving for solutions and collaborating on cross‑functional teams.
  • Technical leadership ability (education, experience, and communication skills).
  • Typically requires a master’s or PhD in Electrical Engineering, Physics, or Material Science and 5+ years of experience in a relevant job function.
Benefits

Salary: $125,000-$165,000 per year (good‑faith estimate).

Benefits and other eligible compensation include health, dental, vision, disability, and life insurance; 401(k) plan with company match; paid time off; annual bonus; and tuition reimbursement.

Equal Employment Opportunity

Polar Semiconductor is an Equal Opportunity Employer and prohibits discrimination and harassment of any kind. We are committed to the principle of equal employment opportunity for all employees and to providing employees with a work environment free of discrimination and harassment. All employment decisions are based on business needs, job requirements, and individual qualifications, without regard to race, color, religion, sex, sexual orientation, gender identity, age, national origin, disability, veteran status, or any other status protected by the laws or regulations in the locations where we operate.

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