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Memory Circuit Design Jobs (NOW HIRING)

As the Senior Circuit Design Engineer, you will own the end-to-end design of the CCA, translating ... High-speed design experience, including PCIe, Gigabit Ethernet, SERDES, or DDR4/5 memory interfaces.

High-speed design experience including PCIe, Gigabit Ethernet, SERDES, or DDR4/5 memory interfaces ... Experience with rigidflex circuit card design * Experience with environmental qualification testing ...

Role: Circuit Design Engineer Client: Defense-Aerospace Hourly Rate: up to $71/hr (W2, non ... High-speed design experience including PCIe, Gigabit Ethernet, SERDES, or DDR4/5 memory interfaces

Role: Circuit Design Engineer Client: Defense-Aerospace Hourly Rate: up to $71/hr (W2, non ... High-speed design experience including PCIe, Gigabit Ethernet, SERDES, or DDR4/5 memory interfaces

Memory I/O & Circuit Design Engineer Boxborough, MA (Hybrid) 12 + Months $60-65/HR Role: Design High-Speed IO circuits and DDR IPs. Duties: Design/port standard cells, run spice simulations, and ...

CPU Circuit Design Engineer

Austin, TX · On-site

$91K - $172K/yr

We provide high speed custom circuit & memory compiler designs for Intel Cores on Client, Server ... Designs floorplans, performs circuit design, schematic entry, simulation for CPU blocks, and ...

CPU Circuit Design Engineer

Austin, TX · On-site

$91K - $172K/yr

We provide high speed custom circuit & memory compiler designs for Intel Cores on Client, Server ... Designs floorplans, performs circuit design, schematic entry, simulation for CPU blocks, and ...

Circuit Design Engineer

Durham, NC · On-site

$147K - $220K/yr

As a member of the Ampere Circuit Team, you will contribute to the design of high-performance memory arrays-from initial concept through hardware validation. You will work on transistor-level design ...

Principal Design Engineer

San Jose, CA · On-site

$176K - $298K/yr

Design and optimize TSV(Through-Silicon Via) interface circuits connecting memory die to logic die including Rx/Tx circuit for internal TSV channels, impedance matching and timing margin analysis.

Principal Design Engineer

San Jose, CA · On-site

$176K - $298K/yr

Design and optimize TSV(Through-Silicon Via) interface circuits connecting memory die to logic die including Rx/Tx circuit for internal TSV channels, impedance matching and timing margin analysis.

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Memory Circuit Design information

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How much do memory circuit design jobs pay per year?

As of Jul 15, 2026, the average yearly pay for memory circuit design in the United States is $110,795.00, according to ZipRecruiter salary data. Most workers in this role earn between $83,500.00 and $132,500.00 per year, depending on experience, location, and employer.

What is memory circuit design?

Memory circuit design is the process of creating integrated circuits that store and retrieve data in electronic devices. These circuits can include various types of memory such as SRAM, DRAM, or flash memory. Designers focus on optimizing for speed, power consumption, area, and reliability. Memory circuit designers work closely with semiconductor fabrication teams to ensure the final product meets performance and manufacturing requirements.

What are the key skills and qualifications needed to thrive as a Memory Circuit Design Engineer, and why are they important?

To thrive as a Memory Circuit Design Engineer, you need a strong background in electrical engineering, semiconductor physics, and circuit design principles, often backed by a relevant degree. Proficiency with EDA tools like Cadence, Synopsys, and SPICE simulation software, as well as knowledge of Verilog or VHDL, is typically required. Attention to detail, problem-solving abilities, and effective teamwork are crucial soft skills for this role. These competencies are vital for designing reliable, high-performance memory circuits that meet industry standards and project requirements.

What are some common challenges faced by memory circuit design engineers, and how do teams typically address them?

Memory circuit design engineers often encounter challenges related to meeting strict power, speed, and area targets while ensuring data reliability and yield. These challenges are compounded by rapid technology scaling and tight project timelines. Teams typically address them through close collaboration with process engineers, regular design reviews, and the use of advanced simulation tools to optimize and verify designs early in the development cycle. Cross-functional teamwork is essential, as designers often work closely with layout, verification, and test engineering teams to deliver high-quality memory products.

What is the difference between Memory Circuit Design vs Digital IC Design?

AspectMemory Circuit DesignDigital IC Design
Required CredentialsBachelor's or Master's in Electrical Engineering, specialized in circuit designBachelor's or Master's in Electrical Engineering, with focus on digital systems
Work EnvironmentDesigning memory modules, working in labs or design teamsDesigning digital integrated circuits, often in cleanroom environments
Industry UsageSemiconductor companies, memory chip manufacturersConsumer electronics, computing, and communication devices
Common Search/ComparisonMemory Circuit Design vs Digital IC Design

Memory Circuit Design focuses on creating memory components like RAM and flash memory, emphasizing specialized circuit techniques. Digital IC Design covers a broader range of digital integrated circuits, including processors and logic chips. While both roles require similar educational backgrounds and work environments, Memory Circuit Design is more specialized in memory technologies, whereas Digital IC Design encompasses a wider array of digital components.

More about Memory Circuit Design jobs
What states have the most Memory Circuit Design jobs? States with the most job openings for Memory Circuit Design jobs include:
What job categories do people searching Memory Circuit Design jobs look for? The top searched job categories for Memory Circuit Design jobs are:
Senior Staff Engineer, Memory/SRAM Circuit Design Engineer

Senior Staff Engineer, Memory/SRAM Circuit Design Engineer

Samsung Semiconductor, Inc.

San Jose, CA • On-site

Full-time

Medical, Dental, Vision, Life, Retirement, PTO

Posted 5 days ago


Samsung Electronics rating

6.7

Company rating: 6.7 out of 10

Based on 50 frontline employees who took The Breakroom Quiz

111th of 142 rated electronics manufacturers


Job description

Position Summary

Samsung, a world leader in advanced semiconductor technology, is founded on a simple philosophy - the endless pursuit of excellence will create a better world for all. At Samsung Austin Research and Development Center (SARC) and Advanced Computing Lab (ACL), we are building a center of excellence for Intellectual Property (IP) that is applied to high-performance computing devices (mobile, automotive, and other custom market segments) consumed by millions of people around the world. Come build with us!

Role and Responsibilities

As a Senior Staff Memory/SRAM Circuit Design Engineer, you will help drive the development of high-performance, power- and area-efficient SRAM and custom memory macros that enable next-generation CPU and GPU applications. Your work will directly influence product competitiveness by delivering differentiated memory solutions optimized for advanced technology nodes.

In this high-impact individual contributor role, you will be part of a specialized custom design team driving innovation across circuit design and design-technology co-optimization (DTCO). You will translate advanced process capabilities into robust, production-ready memory solutions, influencing both circuit architecture and technology direction to achieve industry-leading performance, power, area (PPA) targets.

  • Leveraging your expertise in one or more technical areas, you will contribute to the end-to-end design and delivery of SRAM and custom memory circuits, including transistor-level design, logic and functional verification, timing generation, layout supervision, physical verification (LVS/DRC), and post-layout validation (SPICE, EMIR/noise).

  • You thrive on developing and applying advanced circuit design techniques, exploring new architectures and methodologies to optimize PPA targets beyond standard memory solutions.

  • You help lead DTCO-driven innovation by analyzing the interaction between process technology and circuit behavior, and influencing layout rules, device characteristics, and memory architecture for advanced nodes (5nm) to the process technology team.

  • You drive cross-functional collaboration with hardware design, architecture, SoC, software, and foundry teams to enable seamless integration of SRAM into system designs, while contributing to methodology, automation, and flow improvements that enhance design quality and productivity.

  • You inspire high performance by mentoring junior engineers, fostering a culture of ownership and innovation, documenting designs and methodologies, and staying ahead of emerging memory technologies and advanced technology nodes.

Skills and Qualifications

  • 11+ years of experience with a Bachelor's Degree in Computer Science/Engineering, or 9+ years of experience with a Master's Degree, or 7+ years of experience with a Ph.D.

  • Strong expertise in SRAM circuit design, timing generation, logic/functional verification, and physical verification (LVS/DRC).

  • Experience with advanced node design and DTCO, including technology, logic and memory cell architecture, and interconnect exploration, for below 5nm

  • Strong proficiency with industry-standard design tools and scripting languages (Python, Perl)

  • Strong understanding of computer architecture and SoC integration.

  • Excellent analytical, and problem-solving skills, with the ability to propose data-driven solutions and guide execution.

  • Excellent written and verbal communication skills for documenting designs, methodologies, and best practices.

  • Excellent collaboration skills, with the ability to navigate ambiguity and influence in a fast-paced, global team environment.

Preferred qualifications:

  • Multiple-Foundry experience is a big plus.

  • Ability to design memory with excellent PPA (Power, Performance, Area) under given SPEC.

  • Lead of memory bit cell and custom circuit related DTCO.

  • Exposure to emerging technologies such as Processing-in-Memory (PIM).

Our Team

The Advanced Design Technology and Design Implementation teams play a critical role in enabling GPU and system-level development within Samsung SARC/ACL and the broader System LSI organization. Operating at the intersection of design technology and physical implementation, we partner closely with Foundry from early technology exploration through the full development cycle. Spanning advanced design methodologies, GPU physical design, CAD, and DTCO, we accelerate adoption of leading technology nodes and deliver optimized power, performance, area (PPA), silicon quality, and turnaround time for next-generation IP solutions.

You will join a highly collaborative, fast-paced environment working across parallel development cycles with direct impact on consumer technologies used worldwide. Here, you'll help build what's next: experimenting with new ideas, broadening your technical expertise, and solving impactful challenges alongside talented teammates who value ownership, continuous learning, and growth.

Total Rewards

At Samsung - SARC/ACL, base pay is one part of our total compensation package and is determined within a range. This provides the opportunity to progress as you grow and develop within a role. The base pay range for this role is between $180,200 and $297,200. Your actualbase pay will depend on variables that may includeyour educationskills, qualifications, experience, and worklocation.

Samsung employees have access to benefits including: medical, dental, vision, life insurance, 401(k), onsite lunch, employee purchase program, tuition assistance (after 6 months), paid time off, student loan program, wellness incentives, and many more. In addition, regular full-time employees (salaried or hourly) are eligible for MBO bonus compensation, based on company, division, and individual performance.

Additionally, this role might be eligible to participate in long term incentive plan and relocation.

This is an exempt position, which is not eligible for overtime pay under the Fair Labor Standards Act (FLSA).

U.S. Export Control

This position requires the ability to access information subject to U.S. export control restrictions. Applicants must have the ability to access export-controlled information or be eligible to receive a government authorization to access export-controlled information.

Trade Secrets

By submitting an application, you [applicant] agree[s] not to disclose to Samsung, or induce Samsung to use, any confidential or proprietary information (including trade secrets) belonging to any current or previous employer or other person or entity.

#SARC #ACL

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