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Internship Rf Power Amplifier Engineer Jobs (NOW HIRING)

Falcomm

RFIC Power Amplifier Design Engineer

Atlanta, GA · On-site

Falcomm is a fabless semiconductor company developing high-efficiency RF power amplifier chips and ... As an RFIC Power Amplifier Design Engineer, you will play a central role in shaping PA designs that ...

Murata America

RF Systems Engineer

Waltham, MA · Hybrid

Eta Wireless is solving the fundamental problem of RF power amplifier power consumption in ... Eta is a multi-disciplinary, multi-national team of engineers with expertise spanning RF systems ...

Murata Americas

RF Systems Engineer

Waltham, MA · On-site

Eta Wireless is solving the fundamental problem of RF power amplifier power consumption in ... Eta is a multi-disciplinary, multi-national team of engineers with expertise spanning RF systems ...

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How much do internship rf power amplifier engineer jobs pay per hour?

As of Jul 1, 2026, the average hourly pay for internship rf power amplifier engineer in the United States is $21.67, according to ZipRecruiter salary data. Most workers in this role earn between $18.27 and $24.04 per hour, depending on experience, location, and employer.

What is the difference between Internship Rf Power Amplifier Engineer vs Rf Power Amplifier Engineer?

AspectInternship Rf Power Amplifier EngineerRf Power Amplifier Engineer
QualificationsEnrolled in or recent graduate of relevant engineering programBachelor's or master's in electrical engineering or related field
Work EnvironmentInternship setting, supervised, entry-level tasksFull-time professional role, independent project work
ResponsibilitiesAssisting in design/testing, learning industry toolsDesign, develop, test RF power amplifiers independently
ExperienceLimited or no professional experienceSeveral years of relevant experience often preferred

In summary, an Internship Rf Power Amplifier Engineer is a temporary, entry-level position for students or recent graduates gaining industry experience, while an Rf Power Amplifier Engineer is a full-time professional responsible for designing and developing RF power amplifiers with more independence and expertise.

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Internship Rf Power Amplifier Engineer jobs near you
Infographic showing various Internship Rf Power Amplifier Engineer job openings in the United States as of June 2026, with employment types broken down into 9% Internship, 59% Full Time, 1% Part Time, 6% Temporary, 24% Contract, and 1% Nights. Highlights an 90% Physical, 1% Hybrid, and 9% Remote job distribution, with an average salary of $45,064 per year, or $21.7 per hour.

RFIC Power Amplifier Design Engineer

Falcomm

Atlanta, GA • On-site

Full-time

Medical, Dental, Vision, PTO

Posted 14 days ago

Job description

Falcomm is a fabless semiconductor company developing high-efficiency RF power amplifier chips and RF front-end solutions for communications, aerospace, and defense applications. Our work is focused on turning advanced RF innovation into practical, high-performance products that solve real-world challenges across demanding environments.

This is an opportunity to contribute to cutting-edge semiconductor development in a fast-moving setting where technical depth and execution matter. You'll join a team focused on advancing RF front-end performance and helping bring sophisticated power amplifier solutions from concept into silicon.

As an RFIC Power Amplifier Design Engineer, you will play a central role in shaping PA designs that support next-generation communications and high-performance RF systems. This role is well suited to someone who enjoys complex technical challenges, works well in a fast-paced engineering environment, and is motivated by seeing advanced semiconductor design translated into real applications.

Responsibilities
  • Lead RFIC power amplifier design from architecture through tapeout and validation.
  • Drive PA tapeouts using SOI or SiGe technologies.
  • Develop IC layouts and perform PEX extraction as part of the design flow.
  • Perform electromigration analysis to support robust RFIC implementation.
  • Simulate the linear and non-linear behavior of RF power amplifiers to meet performance targets such as gain, linearity, power, and bandwidth.

Requirements

  • Master's or PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design.
  • 3+ years of experience in RF power amplifier design and development up to 60GHz, including PA tapeout experience using SOI or SiGe technologies.
  • Strong circuit design skills for RFIC power amplifier design.
  • Deep knowledge of differential and single-ended power amplifiers, including modes of operation, matching, bias, and architecture considerations.
  • Experience with IC layout and PEX extraction, along with performing electromigration analysis and simulating both linear and non-linear RF PA behavior to meet targets for gain, linearity, power, and bandwidth.
  • Proficiency with RFIC simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, and Siemens Calibre, plus experience with EM simulators such as HFSS, Momentum, or EMX.
  • EM knowledge of passive RF components, including couplers, baluns, and matching networks.
  • Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques, and modulation types such as QPSK, APSK, and QAM.

Benefits

  • Stock option plan
  • Medical, dental, and vision
  • Paid time off
  • Family leave

DISCLOSURE:

Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.

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