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About GlobalFoundries

GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, powerefficient and highperformance solutions for highgrowth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF's talented, global team remains focused every day on security, longevity and sustainability. For more information, visitwww.gf.com.

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Summary of Role:

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking forandevice andintegration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT

Essential Responsibilities include:

• Responsible for TCAD simulation, design, electricalcharacterizationand analysis of SiGe HBT devices

• Conduct theoretical studies or simulations tooptimizethe device performance and benchmark it againststate of the art

• Work closely withprocessintegration team for device fabrication work.

• Establishnew technologydesign rules, teststructuresand test methodologies

• Responsible for the DC and RF characterization and analysis including high power measurements, s-parameter andloadpull

• Own and drive technical process problem solving.

• Data analysis

• Interact with internal& externalcustomers and respond to technical queries.

• Innovate new methods of continuous process/device improvement.

Other Responsibilities:

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Securityrequirementsand programs.

Required Qualifications:

• Education-Graduating withMaster'sor PhDinElectrical, Materials Science, or other relevant engineering or physical science disciplinefroman accredited degree program.

• Research background in CMOSor III-V or memorydevice physics, semiconductor processing,and characterization

• Strong data analysis skills

• Excellent interpersonal skills, both oral and written

• Must have at least an overall 3.0 GPA and proven good academic standing.

• Language Fluency - English (Written & Verbal)

Preferred Qualifications:

• Research experience in Silicon or SiGeBiCMOSFEOL or BEOL processing and/or semiconductor process development

• Research experience in RF device design and characterization including high frequency design,measurementand analysis

• Experience with Cadence or any other layout and simulation tool

• Prior related internship or co-op experience.

• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.

• Project management skills,i.e.the ability to innovate andexecutesolutions that matter; the ability to navigate ambiguity.

• Strong written and verbal communication skills

• Strong planning & organizational skills

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