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Gan Device Engineer Jobs in California (NOW HIRING)

KYOCERA SLD Laser, Inc

R&D Test Engineer

Fremont, CA · On-site

$110K - $130K/yr

Kyocera SLD Laser is looking for an individual to participate in achieving GaN device testing ... MS or Ph.D. in Materials Science, Electrical Engineering, Physics, or related fields. * Self ...

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Gan Device Engineer information

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$28.4K

$105.6K

$179.2K

How much do gan device engineer jobs pay per year?

As of Aug 23, 2026, the average yearly pay for gan device engineer in California is $105,641.00, according to ZipRecruiter salary data. Most workers in this role earn between $76,379.00 and $134,644.00 per year, depending on experience, location, and employer.

What is a Gan device engineer?

A GaN Device Engineer is responsible for designing, developing, and optimizing gallium nitride (GaN)-based semiconductor devices used in power electronics, RF applications, and optoelectronics. They work on device fabrication, characterization, and reliability analysis to enhance efficiency and performance. This role often involves collaboration with process engineers, circuit designers, and materials scientists to innovate high-performance GaN technologies. GaN Device Engineers play a crucial role in advancing applications in industries such as telecommunications, automotive, consumer electronics, and renewable energy.

What are the key skills and qualifications needed to thrive as a Gan device engineer?

To thrive as a GaN Device Engineer, you need a solid background in semiconductor physics, device fabrication, and materials science, typically supported by a relevant engineering degree. Hands-on experience with cleanroom technologies, characterization tools (such as SEM/TEM, probe stations), and familiarity with CAD software or TCAD simulation tools is highly valuable. Analytical thinking, teamwork, and effective problem-solving distinguish top performers in this field. These competencies are crucial for advancing device innovation, ensuring process integrity, and collaborating efficiently with multidisciplinary teams.

What are the primary challenges faced by Gan device engineers in the semiconductor industry?

GaN Device Engineers often encounter challenges related to optimizing device performance, managing material defects, and ensuring the reliability of gallium nitride devices under high-voltage or high-frequency conditions. They must constantly troubleshoot fabrication issues and collaborate closely with process, design, and reliability engineering teams. Keeping up with rapid advances in GaN technology and industry standards also requires ongoing learning and adaptability. These challenges provide opportunities for professional growth and innovation, as engineers contribute to next-generation power electronics and RF solutions.

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For Gan Device Engineer jobs in California, the most frequently searched job titles are:

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Gan Device Engineer jobs near you
Infographic showing various Gan Device Engineer job openings in California as of August 2026, with employment types broken down into 95% Full Time, 2% Part Time, and 3% Contract. Highlights an 85% Physical, 6% Hybrid, and 9% Remote job distribution, with an average salary of $105,641 per year, or $50.8 per hour.

Staff Device Engineer

Power Integrations

San Jose, CA • On-site

Full-time

Re-posted 18 days ago

Job description

Description
Responsibilities
  • Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).
  • Perform device/process simulations and device layout for GaN power devices.
  • Assignments will include power device creation, fabrication and full characterization, and issuing technical reports.
  • Evaluate electrical / thermal performance and reliability of GaN power devices.
  • Prior experience in Si power device development is a plus.
  • Interact with other departments for best use of Company's technologies and to support key customer requirements.

Requirements
  • B. Sc degree in Electrical Engineering with 8 years' working experience or
  • M. Sc degree in Electrical Engineering with 6 years' working experience or
  • Ph. D degree in Electrical Engineering with 3 years' working experience
  • Proven track record of independently designing and taking into volume production of high-voltage GaN power devices
  • Sound understanding of semiconductor device physics, especially WBG
  • Proficient in TCAD simulation and CADENCE layout tools
  • Hands-on experience with high-voltage testing and data acquisition systems
  • Strong communication and collaboration skills

Apply