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Intern Memory Design Engineer Jobs in Addison, IL

Eliyan

Digital - SerDes Digital Design Lead

Mundelein, IL · On-site

$138K/yr

D in Electrical Engineering, Computer Engineering, or related fields * 12+ years of experience in ... memory interfaces a plus We may use artificial intelligence (AI) tools to support parts of the ...

DRW

Platform Engineer Intern

Chicago, IL · On-site

$175K/yr

As a Platform Engineer Intern , you will be part of our advanced technology team focused on ... Design, write, and deliver software to improve the availability, scalability, latency, and ...

Hendrickson USA, LLC

Engineering Intern

Woodridge, IL · On-site

$16.50 - $21.50/hr

The Engineering Intern role with the Advanced Technology Group (ATG) offers students an incredible ... Create CAD models and simulations for ongoing projects. * Assisting with conducting tests on ...

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All JobsIntern Memory Design Engineer JobsIntern Memory Design Engineer Jobs in Addison, IL

Intern Memory Design Engineer information

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How much do intern memory design engineer jobs pay per hour?

As of Aug 15, 2026, the average hourly pay for intern memory design engineer in Addison, IL is $19.41, according to ZipRecruiter salary data. Most workers in this role earn between $14.47 and $21.68 per hour, depending on experience, location, and employer.

What are some common challenges faced by an intern memory design engineer during their internship?

As an Intern Memory Design Engineer, you may encounter challenges such as understanding complex circuit design concepts and adapting to industry-standard Electronic Design Automation (EDA) tools. Working in this role often involves collaborating closely with experienced engineers and cross-functional teams to verify and optimize memory layouts for performance and reliability. Navigating the steep learning curve and balancing hands-on project work with ongoing training can be demanding, but these experiences are invaluable for building foundational skills and industry knowledge.

What does an intern memory design engineer do?

An Intern Memory Design Engineer assists in the design, development, and testing of computer memory components such as DRAM, SRAM, or Flash memory. They work closely with senior engineers to create circuit schematics, run simulations, analyze data, and help optimize memory performance. Interns may also participate in debugging and validation of memory products, learning industry-standard design tools and methodologies. This role provides valuable hands-on experience in semiconductor design and the opportunity to contribute to real-world projects.

What are the key skills and qualifications needed to thrive as an intern memory design engineer, and why are they important?

To thrive as an Intern Memory Design Engineer, you need a solid background in electrical engineering, digital/analog circuit design, and semiconductor fundamentals, often supported by ongoing or completed coursework toward a relevant degree. Familiarity with EDA tools such as Cadence, Synopsys, or Mentor Graphics, and basic knowledge of scripting languages like Python or TCL, are typically required. Strong analytical thinking, attention to detail, and effective communication set standout interns apart in collaborative engineering environments. These skills and qualities are crucial for designing reliable memory components and contributing efficiently to complex, team-driven projects.

What are the most commonly searched types of Memory Design Engineer jobs in Addison, IL?

The most popular types of Memory Design Engineer jobs in Addison, IL are:

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Cities near Addison, IL with the most Intern Memory Design Engineer job openings:

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Digital - SerDes Digital Design Lead

Eliyan

Mundelein, IL • On-site

$138K/yr

Full-time

Re-posted 25 days ago

Job description

Join the leading chiplet startup!  As the SerDes Digital Design Lead at Eliyan, you will drive the architecture and implementation of next-generation high-speed serial link IPs targeting 224G and 448G data rates for chiplet-based systems with best-in-class power, area, manufacturability, and design flexibility.  You will lead the digital design of SerDes transmitter and receiver datapaths, clock and data recovery (CDR) digital logic, equalization engines, and PHY-level controller logic for cutting-edge interconnect products.  You will work with a cross-functional team of experts that operate from first principles, innovate and push the envelope to create high-volume and high-performance manufacturable products.  We offer a fun work environment with excellent benefits.
Key Responsibilities:
  • Lead the micro-architecture definition and RTL implementation of high-speed SerDes digital blocks targeting 224G PAM4 and 448G signaling, including DSP-based equalization (FFE, DFE, CTLE digital controls), CDR loop logic, and adaptation engines
  • Design and optimize PHY-level digital logic including TX driver control, RX datapath, PCS sublayers, lane alignment, deskew, and gear-boxing/rate-matching logic
  • Architect and implement forward error correction (FEC) encoder/decoder blocks including RS-FEC (KP4/KP8), interleaving, and low-latency FEC architectures optimized for 224G/448G link budgets
  • Drive RTL design quality through lint, CDC/RDC analysis, synthesis optimization, and close collaboration with physical design and timing closure teams on advanced FinFET/GAA process nodes
  • Collaborate closely with analog/mixed-signal designers on SerDes AFE integration, digital-to-analog interface specification, calibration sequencing, and AMS co-simulation bring-up
  • Own design deliverables and milestones from RTL development through tapeout signoff; coordinate with verification, DFT, and backend teams to meet aggressive schedules
  • Define and implement auto-negotiation, link training, and PHY initialization state machines compliant with IEEE 802.3
  • Develop power-efficient digital architectures with emphasis on clock gating, voltage scaling, and low-power design techniques for data center and AI/ML interconnect applications
  • Participate in standards bodies and stay current with emerging 224G/448G specifications, OIF CEI, and next-generation interconnect standards
  • Design firmware-accessible register interfaces, configuration/calibration logic, and DPI-based firmware co-simulation hooks for PHY bring-up and debug
  • Support post-silicon characterization and debug activities; correlate silicon measurements with pre-silicon simulation results to drive design improvements
Qualifications:
  • Masters or Ph.D in Electrical Engineering, Computer Engineering, or related fields
  • 12+ years of experience in digital design of high-speed SerDes, PHY, or transceiver IPs with proven tapeout experience at 112G PAM4 or higher data rates
  • Strong RTL design skills in SystemVerilog with deep understanding of synthesis, timing closure, CDC/RDC, and design-for-test (DFT) methodologies
  • Expert-level knowledge of SerDes DSP architectures including FFE, DFE, MLSE, CTLE digital controls, CDR loop dynamics, and adaptation/calibration algorithms for PAM4 signaling
  • Strong working knowledge of IEEE 802.3 (100G/200G/400G/800G/1.6T), OIF CEI specifications, FEC architectures (RS-FEC KP4/KP8), and/or die-to-die standards such as UCIe
  • Hands-on experience with high-speed digital design on advanced process nodes (5nm, 3nm, or below) with understanding of FinFET/GAA device implications on circuit performance and power
  • Experience working at the digital-analog boundary including specification of DAC/ADC interfaces, calibration state machines, and integration with mixed-signal simulation environments
  • Demonstrated technical leadership with ability to mentor engineers, drive architectural decisions, and deliver silicon on aggressive schedules in startup or high-growth environments
  • Experience with optical/electrical interconnects (VCSEL, EML), chiplet D2D interfaces, DRAM PHYs, or HBM memory interfaces a plus

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