... silicon foundry, additive manufacturing of radiation shields for protecting electronic systems ... Planning and overseeing device packaging and electrical testing (DC, CV, RF, and high voltage, etc ...
... silicon foundry, additive manufacturing of radiation shields for protecting electronic systems ... Planning and overseeing device packaging and electrical testing (DC, CV, RF, and high voltage, etc ...
... silicon foundry, additive manufacturing of radiation shields for protecting electronic systems ... Planning and overseeing device packaging and electrical testing (DC, CV, RF, and high voltage, etc ...
... silicon foundry, additive manufacturing of radiation shields for protecting electronic systems ... Planning and overseeing device packaging and electrical testing (DC, CV, RF, and high voltage, etc ...
WCM - Foundry Engineer
Weatherly, PA · On-site
The Foundry Engineer is responsible to provide service in support of quality and engineering initiatives by focusing on foundry process, controls and procedures. The ultimate goal is to achieve ...
WCM - Foundry Engineer
Weatherly, PA · On-site
The Foundry Engineer is responsible to provide service in support of quality and engineering initiatives by focusing on foundry process, controls and procedures. The ultimate goal is to achieve ...
Essential Job Duties We are seeking a highly skilled RF Integration Engineer to join our team and ... Be responsible for process development and integration enabling the fabrication of GaN devices ...
Essential Job Duties We are seeking a highly skilled RF Integration Engineer to join our team and ... Be responsible for process development and integration enabling the fabrication of GaN devices ...
Essential Job Duties We are seeking a highly skilled RF Integration Engineer to join our team and ... Be responsible for process development and integration enabling the fabrication of GaN devices ...
Essential Job Duties We are seeking a highly skilled RF Integration Engineer to join our team and ... Be responsible for process development and integration enabling the fabrication of GaN devices ...
RF Fab Development Engineer, Senior
Durham, NC · On-site
$101K - $138K/yr
Click here to view our facilities. addition, MACOM offers foundry services that represents a key ... GaN HEMT R&D Process Development Engineer, Senior Summary In order to expand the GaN HEMTtechnology ...
RF Fab Development Engineer, Senior
Durham, NC · On-site
$101K - $138K/yr
Click here to view our facilities. addition, MACOM offers foundry services that represents a key ... GaN HEMT R&D Process Development Engineer, Senior Summary In order to expand the GaN HEMTtechnology ...
... Engineer to join our III-V process development team within the ... RF Microelectronics/Module Design & Foundry Services (RFMicro) Department. In this role, you will ...
... Engineer to join our III-V process development team within the ... RF Microelectronics/Module Design & Foundry Services (RFMicro) Department. In this role, you will ...
Wide Bandgap Semiconductor Device and Process Integration Engine with Security Clearance
Lexington, MA · On-site
Thorough understanding of ultra-wide band gap semiconductors, (e.g., SiC, GaN, Diamond, etc ... RF, etc.), data and analysis acquisition, and/or programming (MATLAB, Python, LabView)
Wide Bandgap Semiconductor Device and Process Integration Engine with Security Clearance
Lexington, MA · On-site
Thorough understanding of ultra-wide band gap semiconductors, (e.g., SiC, GaN, Diamond, etc ... RF, etc.), data and analysis acquisition, and/or programming (MATLAB, Python, LabView)
FE External Manufacturing Foundry Lead Engineer
San Jose, CA · On-site
$164K - $279K/yr
Be a lead engineer and work with internal teams and foundries to drive GaN/SiC process/device ... external foundry systems accurately reflect, update and report WIP information and data.
FE External Manufacturing Foundry Lead Engineer
San Jose, CA · On-site
$164K - $279K/yr
Be a lead engineer and work with internal teams and foundries to drive GaN/SiC process/device ... external foundry systems accurately reflect, update and report WIP information and data.
... engineering leadership team within the RF Microelectronics/Module Design & Foundry Services ... The ideal candidate will have experience in III-V semiconductor processing, preferably in GaAs, GaN ...
... engineering leadership team within the RF Microelectronics/Module Design & Foundry Services ... The ideal candidate will have experience in III-V semiconductor processing, preferably in GaAs, GaN ...
... engineering leadership team within the RF Microelectronics/Module Design & Foundry Services ... The ideal candidate will have experience in III-V semiconductor processing, preferably in GaAs, GaN ...
... engineering leadership team within the RF Microelectronics/Module Design & Foundry Services ... The ideal candidate will have experience in III-V semiconductor processing, preferably in GaAs, GaN ...
Process Engineer - Branchburg, NJ
Washington, DC · On-site
$135K - $140K/yr
Collaborate closely with device and foundry engineering teams to develop next-generation high ... Experience with GaN material growth and familiarity with Veeco MOCVD tools preferred. Compensation ...
Process Engineer - Branchburg, NJ
Washington, DC · On-site
$135K - $140K/yr
Collaborate closely with device and foundry engineering teams to develop next-generation high ... Experience with GaN material growth and familiarity with Veeco MOCVD tools preferred. Compensation ...
Foundry Technology Engineer - Sr Staff
Boston, MA · On-site
$150K - $180K/yr
The Foundry Technology Development Engineer is responsible for developing foundry technology processes with external foundry partners for the development of MEMS processes and devices, managing ...
Foundry Technology Engineer - Sr Staff
Boston, MA · On-site
$150K - $180K/yr
The Foundry Technology Development Engineer is responsible for developing foundry technology processes with external foundry partners for the development of MEMS processes and devices, managing ...
... Engineer to join our III-V process development team within the ... RF Microelectronics/Module Design & Foundry Services (RFMicro) Department. In this role, you will ...
... Engineer to join our III-V process development team within the ... RF Microelectronics/Module Design & Foundry Services (RFMicro) Department. In this role, you will ...
... engineering leadership team within the RF Microelectronics/Module Design & Foundry Services ... The ideal candidate will have experience in III-V semiconductor processing, preferably in GaAs, GaN ...
... engineering leadership team within the RF Microelectronics/Module Design & Foundry Services ... The ideal candidate will have experience in III-V semiconductor processing, preferably in GaAs, GaN ...
... Engineer to join our III-V process development team within the ... RF Microelectronics/Module Design & Foundry Services (RFMicro) Department. In this role, you will ...
... Engineer to join our III-V process development team within the ... RF Microelectronics/Module Design & Foundry Services (RFMicro) Department. In this role, you will ...
RF Engineer
Aurora, CO · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
RF Engineer
Aurora, CO · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
RF Engineer
Reston, VA · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
RF Engineer
Reston, VA · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
RF Engineer
Honolulu, HI · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
RF Engineer
Honolulu, HI · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
RF Engineer
Annapolis Junction, MD · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
RF Engineer
Annapolis Junction, MD · On-site
SIMILAR CAREER TITLESRadio Frequency Engineer, Wireless Communications Engineer, Microwave Engineer, Antenna Design Engineer, RF Systems Engineer, Telecommunications Engineer, Signal Processing ...
Foundry Process Engineer Rf Gan information
See salary details
$69.5K - $71.2K
4% of jobs
$71.2K - $73K
5% of jobs
$73K - $74.7K
8% of jobs
$76.2K is the 25th percentile. Wages below this are outliers.
$74.7K - $76.4K
9% of jobs
$76.4K - $78.1K
12% of jobs
$78.1K - $79.9K
9% of jobs
The median wage is $80.3K / yr.
$79.9K - $81.6K
12% of jobs
$81.6K - $83.3K
9% of jobs
$84.4K is the 75th percentile. Wages above this are outliers.
$83.3K - $85K
12% of jobs
$85K - $86.8K
9% of jobs
$86.8K - $88.5K
12% of jobs
$69.5K
$80.8K
$88.5K
How much do foundry process engineer rf gan jobs pay per year?
What is the salary of RF engineer in TCS?
What engineers make $500,000?
What is the difference between Foundry Process Engineer Rf Gan vs Foundry Process Engineer?
| Aspect | Foundry Process Engineer Rf Gan | Foundry Process Engineer |
|---|---|---|
| Credentials | Bachelor's in Materials Science, Chemical Engineering, or related field; experience with RF Gan processes | Bachelor's in similar fields; general foundry process knowledge |
| Work Environment | Semiconductor foundries, RF Gan manufacturing facilities | Various foundries, including silicon and compound semiconductor plants |
| Industry Usage | Primarily in RF and microwave device manufacturing | Broader foundry industry, including microelectronics and power devices |
The Foundry Process Engineer Rf Gan specializes in RF Gallium Nitride processes, focusing on RF device fabrication, while the Foundry Process Engineer has a broader role across various semiconductor manufacturing processes. Both roles require similar technical skills but differ in industry focus and specific process expertise.
What engineers make $300,000 a year?
How much does a process engineer get paid?

Wide Bandgap Semiconductor Device and Process Integration Engineer
MIT Lincoln LaboratoryLexington, MA
Full-time
Medical, Dental, Vision, Retirement, PTO
Posted 21 hours ago
Job description
The Advanced Materials and Microsystems Group (G81) aims to leverage physical properties at the small scale to develop enabling novel materials, custom microelectronics, and multifunctional microsystems. Our activities range from developing new approaches to materials discovery, pioneering work on specialized microelectronic process technologies, embedding electronic devices in fibers and fabrics, and creating new materials and new processes for additive manufacturing. Our system application space is equally broad, encompassing low-cost picosatellites fabricated in a silicon foundry, additive manufacturing of radiation shields for protecting electronic systems, persistent monitoring of wide areas of ocean using arrays of sensors and hydrophones, and specialized microchips to test and validate cooling solutions for highly integrated high-performance microprocessors. Our high-impact work is enabled by the Microelectronics Laboratory, the Defense Fabric Discovery Center, and other cleanroom facilities at the Laboratory.
The group seeks an engineer/scientist to conduct research and development to advance the state-of-the-art in ultra-wide bandgap semiconductor devices from first-of-a-kind demonstrations to prototypes suitable for technology transfers for applications relating to RF electronics (communications, radar), power electronics (radio frequency, power conversion, sensors, etc.), and other related electronics components for extreme environments. In this role, this individual will serve as a (1) technical subject-matter expert, (2) lead and execute technical projects, (3) contribute to technology roadmaps to establish future generations of the Laboratory's special-purpose device technologies. Duties will require familiarity and leadership in device design, understanding of epitaxial growth processes, fabrication (process development and integration), packaging, test, evaluation and analysis. In addition to technical skills, the candidates should excel in multidisciplinary teamwork, clear and effective communication, independent problem-solving, and meeting program goals and project schedule deadlines.
- Evaluating and selecting suitable materials, composition and doping profiles, and process steps to achieve desired device specifications, manufacturability, and yield
- Collaborating closely with process engineers to define and refine process flows, experiment planning, execution, and analysis of results
- Developing novel device and circuit elements motivated by mission and system requirements
- Planning and overseeing device packaging and electrical testing (DC, CV, RF, and high voltage, etc.), thermal, and reliability characterization of fabricated devices, analyzing test data to validate models, extracting key device parameters, and identifying areas for optimization
- Investigating device failures using advanced microscopy and spectroscopy (SEM, TEM, FIB, EDX, etc.), root-cause analysis, and simulation
- Working with multidisciplinary teams (process engineering, test, characterization, packaging) to define objectives, plan development and integration strategies, manage execution, analyze data, and document experimental progress
- Supporting external engagement and communication with project sponsors for technology transfer, as needed.
- Participating in IP development, publications, and external technical collaborations as needed; and briefing diverse internal and external audiences (non-experts, sponsors and senior leadership)
- Contributing to strategic planning by creating technology roadmaps, and identifying new applications, opportunities, and partners for technology transfers
- PhD (or equivalent experience) in Electrical Engineering, Mechanical Engineering, Materials Science and Engineering or similar fields of study. Equivalent experience will be considered.
- Thorough understanding of ultra-wide band gap semiconductors, (e.g., SiC, GaN, Diamond, etc.) semiconductor device (e.g. MOSFETs, IGBTs, BJTs, HEMTs, etc.) physics, materials growth, fabrication, and characterization for power and / or radio frequency applications
- Hands-on experience with electronic device packaging, microfabrication process development lithography, metal and dielectric deposition, etching, wafer dicing), process integration, metrology, electrical characterization, and failure analysis.
- Experience working in a semiconductor, MEMS, or other microfabrication clean room settings
- Experience with design of experiments, statistical methods and their related tools (e.g., JMP), statistical analysis and data-driven problem solving
- Experience with device test and characterization (on-wafer automated DC/CV/AC, RF, etc.), data and analysis acquisition, and/or programming (MATLAB, Python, LabView)
- Demonstrated track record of technical success, impact, and innovation
- Demonstrated technical team leadership and/or project management
- Excellent communication skills with the ability to collaborate effectively across disciplines, all levels of the organization and with external partners and sponsors
- Experience engaging with sponsors and stakeholders to translate application needs into device requirements
- Ability to work independently and as part of cross-functional teams
- Familiarity with processes and procedures for process technology transfers
- Familiarity with power conversion topologies such as buck, boost, and inverter circuits
- Familiarity with RF test circuit elements such as transmission lines, small signal RF, load-pull
- Familiarity with the applications pertaining to commercial and defense interests that use ultra-wide band gap semiconductor devices
Familiarity with device and process simulation tools (e.g., Synopsys, Silvaco), finite element modelling (COMSOL), and / or compact models generation
Recent Graduate Hiring Range: $145,200 - $170,000
Experienced Hiring Range: $145,200 - $220,000
Disclaimer: MIT Lincoln Laboratory provides a typical hiring range as a good faith estimate of what we reasonably expect to offer for this position at the time of posting. The final salary offered to a selected candidate will depend on various factors, including—but not limited to—the scope and responsibilities of the role, the candidate’s experience, skills and education/training, internal equity considerations and applicable legal requirements. This range reflects base salary only and does not include additional forms of compensation or benefits.
At MIT Lincoln Laboratory, our exceptional career opportunities include many outstanding benefits to help you stay healthy, feel supported, and enjoy a fulfilling work-life balance. Benefits offered to employees include:
- Comprehensive health, dental, and vision plans
- MIT-funded pension
- Matching 401K
- Paid leave (including vacation, sick, parental, military, etc.)
- Tuition reimbursement and continuing education programs
- Mentorship programs
- A range of work-life balance options
- ... and much more!
Please visit our Benefits page for more information. As an employee of MIT, you can also take advantage of other voluntary benefits, discounts and perks.
Selected candidate will be subject to a pre-employment background investigation and must be able to obtain and maintain a Secret level DoD security clearance.
MIT Lincoln Laboratory is an Equal Employment Opportunity (EEO) employer. All qualified applicants will receive consideration for employment and will not be discriminated against on the basis of race, color, religion, sex, sexual orientation, gender identity, national origin, age, veteran status, disability status, or genetic information; U.S. citizenship is required.
Requisition ID: 42935
About MIT Alumni Association
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Year founded
1875