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Vice President Rf Power Amplifier Design Engineer Jobs

Wilson Connectivity

RF Design Engineer

Dallas, TX

Two or more years' experience in RF handset design, with focus on RF power amplifier (RFPA) and low ... Microcontroller programming experience in C, C++ * Experience with RF board-level and system design.

Wilson Connectivity

RF Design Engineer

Dallas, TX · On-site

Two or more years' experience in RF handset design, with focus on RF power amplifier (RFPA) and low ... Microcontroller programming experience in C, C++ * Experience with RF board-level and system design.

Wilson Connectivity

RF Design Engineer

Richardson, TX · On-site

$100K - $110K/yr

Two or more years' experience in RF handset design, with focus on RF power amplifier (RFPA) and low ... Microcontroller programming experience in C, C++ * Experience with RF board-level and system design.

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How much do vice president rf power amplifier design engineer jobs pay per year?

As of Jun 23, 2026, the average yearly pay for vice president rf power amplifier design engineer in the United States is $117,680.00, according to ZipRecruiter salary data. Most workers in this role earn between $97,500.00 and $139,000.00 per year, depending on experience, location, and employer.
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What are the most commonly searched types of Rf Power Amplifier Design Engineer jobs? The most popular types of Rf Power Amplifier Design Engineer jobs are:
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Vice President Rf Power Amplifier Design Engineer jobs near you
Infographic showing various Vice President Rf Power Amplifier Design Engineer job openings in the United States as of June 2026, with employment types broken down into 1% Locum Tenens, 94% Full Time, 1% Part Time, 1% Temporary, and 3% Nights. Highlights an 87% Physical, 5% Hybrid, and 8% Remote job distribution, with an average salary of $117,680 per year, or $56.6 per hour.

RFIC Power Amplifier Design Engineer

Falcomm

Atlanta, GA • On-site

Full-time

Medical, Dental, Vision, PTO

Posted 4 days ago

Job description

Falcomm is a fabless semiconductor company developing high-efficiency RF power amplifier chips and RF front-end solutions for communications, aerospace, and defense applications. Our work is focused on turning advanced RF innovation into practical, high-performance products that solve real-world challenges across demanding environments.

This is an opportunity to contribute to cutting-edge semiconductor development in a fast-moving setting where technical depth and execution matter. You'll join a team focused on advancing RF front-end performance and helping bring sophisticated power amplifier solutions from concept into silicon.

As an RFIC Power Amplifier Design Engineer, you will play a central role in shaping PA designs that support next-generation communications and high-performance RF systems. This role is well suited to someone who enjoys complex technical challenges, works well in a fast-paced engineering environment, and is motivated by seeing advanced semiconductor design translated into real applications.

Responsibilities
  • Lead RFIC power amplifier design from architecture through tapeout and validation.
  • Drive PA tapeouts using SOI or SiGe technologies.
  • Develop IC layouts and perform PEX extraction as part of the design flow.
  • Perform electromigration analysis to support robust RFIC implementation.
  • Simulate the linear and non-linear behavior of RF power amplifiers to meet performance targets such as gain, linearity, power, and bandwidth.

Requirements

  • Master's or PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design.
  • 3+ years of experience in RF power amplifier design and development up to 60GHz, including PA tapeout experience using SOI or SiGe technologies.
  • Strong circuit design skills for RFIC power amplifier design.
  • Deep knowledge of differential and single-ended power amplifiers, including modes of operation, matching, bias, and architecture considerations.
  • Experience with IC layout and PEX extraction, along with performing electromigration analysis and simulating both linear and non-linear RF PA behavior to meet targets for gain, linearity, power, and bandwidth.
  • Proficiency with RFIC simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, and Siemens Calibre, plus experience with EM simulators such as HFSS, Momentum, or EMX.
  • EM knowledge of passive RF components, including couplers, baluns, and matching networks.
  • Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques, and modulation types such as QPSK, APSK, and QAM.

Benefits

  • Stock option plan
  • Medical, dental, and vision
  • Paid time off
  • Family leave

DISCLOSURE:

Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.