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Vice President Rf Power Amplifier Design Engineer Jobs

BlackFern Recruitment

RF Engineer

Ronkonkoma, NY

Sr RF engineer full-time role onsite at Ronkonkoma, NY. Responsibilities: * Establishes ... Experience with RF Power Amplifier design and measurements. * Familiar with RF Receiver design and ...

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How much do vice president rf power amplifier design engineer jobs pay per year?

As of May 30, 2026, the average yearly pay for vice president rf power amplifier design engineer in the United States is $117,680.00, according to ZipRecruiter salary data. Most workers in this role earn between $97,500.00 and $139,000.00 per year, depending on experience, location, and employer.
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Vice President Rf Power Amplifier Design Engineer jobs near you
Infographic showing various Vice President Rf Power Amplifier Design Engineer job openings in the United States as of May 2026, with employment types broken down into 3% As Needed, 47% Full Time, 22% Part Time, 25% Contract, and 3% Nights. Highlights an 63% Physical, and 37% Remote job distribution, with an average salary of $117,680 per year, or $56.6 per hour.

RF/mm-Wave CMOS Power Amplifier Design Engineer

Falcomm

Atlanta, GA • On-site

Full-time

Medical, Dental, Vision, Retirement, PTO

Posted 3 days ago

Job description

Are you passionate about pioneering innovations in the semiconductor industry? At Falcomm, we are on a mission to transform semiconductor technologies into tangible, real-world solutions. We specialize in crafting energy-efficient power amplifier products that set the standard for excellence in performance. As an RF Power Amplifier Design Engineer, you will join our dedicated team of experts who are committed to pushing the boundaries of semiconductor technology. Your role will be instrumental in shaping products that not only meet but exceed our customers' expectations.
We are looking for an individual who thrives in a fast-paced environment, is eager to contribute to cutting-edge projects, and is motivated by the challenge of creating real-world applications of semiconductor innovation. If you have a creative mindset and a strong background in RFIC/MMIC design, we invite you to come and make your mark at Falcomm, where innovation meets sustainability in energy-efficient solutions. Become part of a dynamic team where your skills and ideas can truly elevate the field of semiconductors and help us fulfill our vision of delivering unmatched power amplifier technologies.
Responsibilities
  • Design and develop RF power amplifiers for applications such as SATCOM, Wi-Fi, and cellular.
  • Collaborate with cross-functional teams to integrate RF power amplifier designs into larger SoC systems.
  • Create prototype and test RF power amplifier designs to ensure reliability and performance under real-world conditions.
  • Present detailed design reviews covering IC, package, electromagnetic (EM), simulation results, measurement data, and thermal considerations; all related to continuous improvement of RF design processes.
  • Stay on top of industry trends and advancements in semiconductor technology.
  • Support all stages of product development, from concept to mass production.

Requirements
  • Masters or PhD in Electrical Engineering or a related field; with an educational emphasis on RF/microwave integrated circuits design.
  • 3+ years of experience in RF power amplifier design and development up to 60GHz.
  • PA tapeout experience using SOI or SiGe technologies.
  • Strong knowledge of differential and single-ended power amplifiers including modes of operation, matching, bias, and architecture considerations.
  • Strong circuit design skills, experience with IC layout, PEX extraction, performing electromigration analysis, and simulation of both linear and non-linear behavior of RF PAs to meet performance targets such as gain, linearity, power, and bandwidth.
  • Strong EM knowledge of passive components including couplers, baluns, and matching networks.
  • Proficiency in simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, Siemens Calibre, etc.
  • Experience with EM simulators such as HFSS, Momentum, and EMX.
  • Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAM
  • Must be willing to work on-site full-time at our office in Atlanta, GA.

Preferred Qualifications
  • RF/microwave design experience in the Ku, K, Ka, Q, or V-band frequency ranges.
  • Familiarity with radio related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generator, network analyzers, and hands-on experience in a lab with equipment for RF testing and measurement.
  • Excellent analytical and problem-solving skills to troubleshoot design issues.

Benefits
  • Competitive Salary and Equity Package
  • Comprehensive Health, Dental, and Vision Insurance
  • 401(k) Retirement Plan
  • Paid Time Off (PTO) and Sick Leave

DISCLOSURE
  • Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.
  • Applicants wishing to view a copy of Falcomm's Affirmative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application/interview process should notify Falcomm.
  • To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. citizen, lawful permanent resident of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.

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