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Power Semiconductor Device Engineer Jobs (NOW HIRING)

Intel Corporation

Device Engineer

Phoenix, AZ · On-site

$72K - $93K/yr

You will work closely with a team of engineers to push the boundaries of device performance, power ... Intel Foundry strives to make every facet of semiconductor manufacturing state-of-the-art while ...

Intel

Device Engineer

Hillsboro, OR

$79K - $102K/yr

You will work closely with a team of engineers to push the boundaries of device performance, power ... Intel Foundry strives to make every facet of semiconductor manufacturing state-of-the-art while ...

MaxLinear, Inc

Senior Staff Device Engineer

Carlsbad, CA · On-site

$145K - $170K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog ... power the IoT revolution; and enable robust and reliable communication in harsh industrial ...

MaxLinear, Inc

Senior Staff Device Engineer

Irvine, CA · On-site

$145K - $170K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog ... power the IoT revolution; and enable robust and reliable communication in harsh industrial ...

Navitas Semiconductor

Product Engineer, SiC

Torrance, CA · On-site

$90K - $135K/yr

... power device) product, test, or characterization engineering. * Experience with semiconductor ... device analysis and debugging. * Hands-on bench testing experience with high-voltage discrete FETs ...

MaxLinear, Inc.

Senior Staff Device Engineer

Carlsbad, CA · On-site

$145K - $170K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog ... power the IoT revolution; and enable robust and reliable communication in harsh industrial ...

MaxLinear, Inc.

Senior Staff Device Engineer

Carlsbad, CA · On-site

$145K - $170K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog ... power the IoT revolution; and enable robust and reliable communication in harsh industrial ...

MaxLinear, Inc

$145K - $170K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog ... power the IoT revolution; and enable robust and reliable communication in harsh industrial ...

MaxLinear, Inc.

Senior Staff Device Engineer

Irvine, CA · On-site

$145K - $170K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog ... power the IoT revolution; and enable robust and reliable communication in harsh industrial ...

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Power Semiconductor Device Engineer information

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$22.5K

$97.3K

$171K

How much do power semiconductor device engineer jobs pay per year?

As of Sep 10, 2026, the average yearly pay for power semiconductor device engineer in the United States is $97,305.00, according to ZipRecruiter salary data. Most workers in this role earn between $46,500.00 and $133,500.00 per year, depending on experience, location, and employer.

What is a power semiconductor device engineer?

A Power Semiconductor Device Engineer is a specialist who designs, develops, and tests semiconductor devices that control and convert electrical power in electronic systems. These engineers work on components like diodes, transistors, and integrated circuits used in applications such as power supplies, electric vehicles, renewable energy systems, and industrial equipment. Their responsibilities include improving device efficiency, reliability, and manufacturability while working closely with teams in design, fabrication, and testing. This role typically requires a strong background in electrical engineering, materials science, and semiconductor physics.

What are the key skills and qualifications needed to thrive as a power semiconductor device engineer?

To thrive as a Power Semiconductor Device Engineer, you need a strong background in electrical engineering, semiconductor physics, and device fabrication, typically with at least a bachelor's or master's degree in electrical or electronics engineering. Familiarity with simulation tools like TCAD, circuit design software, and experience with cleanroom processes are commonly required, along with knowledge of industry standards and reliability testing. Strong analytical thinking, attention to detail, and effective teamwork and communication skills help set top professionals apart in this field. These skills are crucial for designing reliable, high-performance power devices and ensuring successful project outcomes in a fast-evolving technology landscape.

What are some common challenges faced by power semiconductor device engineers during the device development process?

Power Semiconductor Device Engineers often encounter challenges related to balancing performance, efficiency, and reliability while meeting strict cost and manufacturing requirements. They must carefully optimize device structures to handle high voltages and currents without sacrificing thermal stability or increasing losses. Collaboration with cross-functional teams, such as process engineers and product designers, is essential to address these challenges and ensure that devices meet industry standards and customer expectations. Staying updated on emerging materials and simulation tools also plays a key role in overcoming technical obstacles.

What are popular job titles related to Power Semiconductor Device Engineer jobs?

For Power Semiconductor Device Engineer jobs, the most frequently searched job titles are:

Infographic showing various Power Semiconductor Device Engineer job openings in the United States as of July 2026, with employment types broken down into 76% Full Time, 15% Part Time, and 9% Contract. Highlights an 92% Physical, 2% Hybrid, and 6% Remote job distribution, with an average salary of $97,305 per year, or $46.8 per hour.

SiC Power Device Research Scientist - Design

Durham, NC

Cree
Semiconductor and Electronic Component Manufacturing • 5 - 10K employees
Learn more about Creeexternal

Full-time

Re-posted 19 days ago

Job description

At Wolfspeed, we do amazing things in a human way.

We know that the achievements of our organization are due to the passion, hard work and creativity of our employees. We celebrate different perspectives to foster excellence across our organization, and our goal is to make diversity a foundation of what we do. We are proudly building an environment where you can bring your authentic self to work.

  • Enjoy doing things that people say can't be done? Innovation is at the center of everything we do.
  • Hate red tape? We remove roadblocks instead of creating them.
  • Working parent? We provide childcare assistance and paid parental leave.
  • Student? We offer continuing education assistance.
  • Looking for community? There are many ways to get involved, from Employee Resource Groups to local outreach.

Here's the Gist

In this position within Wolfspeed's Power Device Technology Development department, you will be leading device development projects for next-generation silicon carbide (SiC) power devices (MOSFETs, JFETs, JBS diodes and high voltage IGBTs) with an emphasis on power MOSFETs. You will be participating in all aspects of silicon carbide power device development, with a focus on device design efforts. You will interact with key customers as well as colleagues from Process Development, Test and Validation, Reliability, and New Product Introduction to master understanding of the full product life cycle of the new technologies.

The Day-to-Day:

  • Lead device development efforts in high performance SiC power switching devices
  • Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors
  • Explore new device concepts for future generation of SiC power devices
  • Perform Design of Experiment (DoE) activities for performance optimization of commercial SiC power devices
  • Provide optimum device designs with considerations to manufacturability and reliability
  • Hands on characterization experimental devices
  • Data analysis of experimental data
  • Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications.
  • Prepare technical presentations and papers for internal meetings, as well as conferences and journals

This Job is Right for You if You Have (Requirements):

  • Ph.D. in Electrical Engineering, Solid State Physics, or closely related area
  • 5 years of industrial experience in power device development preferred
  • Experience in low voltage (~ 100V) discrete silicon power MOSFET development preferred
  • Strong understanding in semiconductor device physics
  • Experience in hands-on characterization of power semiconductor devices
  • Working knowledge of commercial TCAD tools
  • Working knowledge of CAD layout tools
  • Understanding of semiconductor fabrication processes and process integration
  • Understanding of semiconductor device characterization methods
  • Design of experiments and data interpretation skills
  • Ability to work in a team setting
  • Excellent analytical and problem-solving skills
  • Excellent communications/presentations skills
  • Must be authorized to work in the USA

This role may require additional duties and/or assignments as designated by management.

To put it legally - Wolfspeed is an equal opportunity employer.

We recruit, employ, train, compensate and promote regardless of race, sex, religion, color, national origin, disability, age, veteran status, gender identity, sexual orientation and other protected status as required by law.

We are an equal opportunity employer and all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, national origin, disability status, protected veteran status, or any other characteristic protected by law.

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About Cree

Sourced by ZipRecruiter

Industry

Semiconductor and electronic component manufacturing

Company size

5,001 - 10,000 Employees

Headquarters location

Durham, NC, US

Year founded

1987

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