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Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves multiple high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our innovative team is helping connect, protect and power our planet.

 We are looking for a Staff MMIC designer responsible for the development of innovative, leading-edge GaN and GaAs-based RF/Microwave products. This will involve design and development of MMIC-based RF/Microwave products using advanced GaN and/or GaAs technologies. You will be a key member of an integrated product development team that includes marketing, program management, mechanical engineering, product engineering, package engineering, test engineering, applications engineering, manufacturing, operations, quality and reliability, and senior management. 
 

Key Roles & Responsibilities:

• Technical lead role for MMIC based product development.
• MMIC design using linear and nonlinear models and 2.5D and 3D electromagnetic simulators.
• Integrate MMIC(s) into single or multichip modules.
• Manage product checkout, optimization, and design verification testing (DVT) in the Microwave Lab.
• Execute DVT analysis and present results to the internal and/or external customer.
• Support product through critical lifecycle stages including concept/feasibility, development, qualification, and production.
• Publish novel design work internally or externally (IMS, BCICTS, GOMAC, etc.) to promote Qorvo's technology and design capabilities.  Submit invention disclosures for potential patents where applicable.

Required Technical Skills and Experience:

• Recent and relevant experience designing RFIC and/or MMIC amplifiers, switches, phase shifters, attenuators, time-delay units (TDUs), hybrid multichip modules, or transmit/receive front-end modules (FEMs).
• Experience in advanced III-V compound semiconductor technologies, specifically GaN and GaAs. 
• Understanding of FET behavioral characteristics is desired.
• User of either ADS or Microwave Office (MWO) nonlinear simulators; and one or more of the following 2.5D or 3D EM simulation tools:  SONNET, Axiem, Momentum, or HFSS.
• Understanding microwave measurements and calibration methods: S-parameters, power, efficiency, source/load pull, noise figure, linearity, and intermodulation distortion.
• Strong written and oral communication skills with the ability to concisely summarize highly technical concepts. 

Desired Experiences:

• Design of high-performance millimeter wave GaAs or GaN MMIC power amplifiers with simultaneous power, bandwidth, efficiency, and linearity requirements.
• SiGe and/or CMOS-based RFIC/MMIC, analog, and mixed signal design experience is a plus.
• Published author in technical journals and/or magazines.
• Strong ability to meet customer technical needs and schedules.

Required Education & Experience:

• BS Electrical Engineering with 8 or more years of experience
• MS Electrical Engineering with 6 or more years of experience
• PhD Electrical Engineering (with RF/Microwave focus) with 2 or more years of experience

 This position is not eligible for visa sponsorship by the Company.

 This position requires work on US Government contracts. Applicants must be a US Person (US citizen, permanent resident, asylee or refugee).

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MAKE A DIFFERENCE AT QORVO   

 We are Qorvo. We do more than create innovative RF and Power solutions for the mobile, defense and infrastructure markets - we are a place to innovate and shape the future of wireless communications. It starts with our employees. As a unified global team, we bring a commitment to excellence, growth and a passion for creating what's next. Explore the possibilities with us.

We are an Equal Employment Opportunity (EEO) employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to any characteristics protected by applicable law, including race, color, religion, sex (as defined by law), national origin, age, military or veteran status, genetic information, or disability.