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Internship Semiconductor Device Engineer Jobs in California

Principal Device Engineer

Carlsbad, CA · On-site

$142K - $191K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog & digital applications, analysis on device/interconnect variability and reliability, and ...

Principal Device Engineer

Carlsbad, CA · On-site

$142K - $191K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog & digital applications, analysis on device/interconnect variability and reliability, and ...

Principal Device Engineer

Irvine, CA · On-site

$142K - $191K/yr

R & D in semiconductor device engineering, especially in device characterization for both RF/analog & digital applications, analysis on device/interconnect variability and reliability, and ...

Device Engineer

Santa Clara, CA · On-site

$85K - $110K/yr

You will work closely with a team of engineers to push the boundaries of device performance, power ... Intel Foundry strives to make every facet of semiconductor manufacturing state-of-the-art while ...

Lead R & D in semiconductor device engineering, especially in device characterization for both RF/analog & digital applications, analysis on device/interconnect variability & reliability and ...

Senior Semiconductor Laser Device Engineer

Livermore, CA · On-site

$122K - $168K/yr

We have an opening for a Senior Semiconductor Laser Device Engineer with expertise in semiconductor laser diodes. You will define, develop, and deploy high power laser diodes and diode arrays. You ...

Senior Semiconductor Laser Device Engineer

Livermore, CA · On-site

$122K - $168K/yr

We have an opening for a Senior Semiconductor Laser Device Engineer with expertise in semiconductor laser diodes. You will define, develop, and deploy high power laser diodes and diode arrays. You ...

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Internship Semiconductor Device Engineer information

What does an internship semiconductor device engineer do?

An Internship Semiconductor Device Engineer assists in the research, design, testing, and analysis of semiconductor devices such as transistors, diodes, and integrated circuits. Interns typically work under the guidance of senior engineers to conduct experiments, collect data, and help optimize device performance. They may also help with device modeling, simulation, and documentation. This role provides hands-on experience in a high-tech environment, often involving the use of specialized software and laboratory equipment.

What are the key skills and qualifications needed to thrive as an internship semiconductor device engineer, and why are they important?

To thrive as an Internship Semiconductor Device Engineer, you typically need a solid background in electrical engineering, semiconductor physics, and device fabrication, often supported by ongoing undergraduate or graduate studies in a related field. Familiarity with simulation tools like TCAD, laboratory measurement equipment, and data analysis software such as MATLAB is commonly expected. Strong problem-solving skills, attention to detail, and effective teamwork and communication abilities help you stand out in this position. These skills are crucial for contributing to device design, analysis, and collaborative research in a fast-paced, innovation-driven environment.

What is the difference between Internship Semiconductor Device Engineer vs Semiconductor Device Engineer?

AspectInternship Semiconductor Device EngineerSemiconductor Device Engineer
Required CredentialsEnrolled in or recent graduate of relevant engineering or physics programBachelor's or Master's in Electrical Engineering, Physics, or related field
Work EnvironmentInternship programs, entry-level projects, supervised tasksFull-time professional role, independent project work
Employer & Industry UsageInternship positions in semiconductor companies, research labsFull-time roles in semiconductor manufacturing, R&D, or design firms
Comparison Search IntentUnderstanding entry-level or internship opportunitiesSeeking full-time career roles in semiconductor device engineering

In summary, an Internship Semiconductor Device Engineer is a temporary, entry-level position aimed at gaining experience, while a Semiconductor Device Engineer is a full-time professional role responsible for designing and developing semiconductor devices. The internship provides foundational exposure, whereas the full-time role involves independent project management and advanced responsibilities.

What types of projects and responsibilities can I expect as an internship semiconductor device engineer?

As an Internship Semiconductor Device Engineer, you'll typically assist with tasks such as device characterization, data analysis, and supporting fabrication or testing of semiconductor components. You may be involved in hands-on lab work, running simulations, and collaborating with senior engineers to troubleshoot device performance. Interns often contribute to ongoing research and development projects, gaining exposure to advanced measurement equipment and industry-standard software tools. This role provides an opportunity to work within multidisciplinary teams, offering valuable insights into real-world engineering processes and paving the way for future career growth in the semiconductor industry.
What are the most commonly searched types of Semiconductor Device Engineer jobs in California? The most popular types of Semiconductor Device Engineer jobs in California are:
What cities in California are hiring for Internship Semiconductor Device Engineer jobs? Cities in California with the most Internship Semiconductor Device Engineer job openings:

Principal/Senior Principal Engineer Microelectronic Semiconductors

Northrop Grumman Corporation

Manhattan Beach, CA

$114K - $171K/yr

Full-time

Medical, Life, PTO

Posted 7 days ago


Northrop Grumman rating

8.2

Company rating: 8.2 out of 10

Based on 362 frontline employees who took The Breakroom Quiz

88th of 538 rated manufacturers


Job description

RELOCATION ASSISTANCE: Relocation assistance may be availableCLEARANCE REQUIRED FOR START: NoCLEARANCE TYPE: NoneTRAVEL: Yes, 10% of the TimeDescriptionAt Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work - and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history.

The Northrop Grumman Microelectronics Center (NGMC) has an opening for a Microelectronics Device Engineer to join our team of qualified, diverse individuals at our Space Park Foundry (SPF) location in Redondo Beach, CA.

In the NGMC we design, manufacture, and test semiconductor products for internal and commercial production customers as well as emerging technology programs.

The SPF semiconductor foundry has unique capabilities supporting a range of production microelectronics technologies (Gallium Arsenide, Indium Phosphide, and Gallium Nitride). SPF provides leading edge technology development in semiconductor materials, processes, devices, and 3D heterogeneous integration (3DHI). SPF's discriminating technological capabilities enable many of Northrop Grumman's ground, avionic, and space systems.

The selected candidate will support the research and development of advanced microelectronics products for the Northrop Grumman Microelectronics Center.

Candidate will be responsible for leading the development and maturation of novel III-V semiconductor technologies including, but not limited to, advanced GaN HEMT technology nodes. Candidate will be responsible for advancing new technologies from early research and development through production. The ideal candidate will be able to thrive in fast-paced, multidisciplinary teams. Responsibilities will include mmW transistor design and simulation, experimental device development, root cause analysis, and RF device characterization.

Candidate must be comfortable in a lab environment and be able to collaborate closely with process engineers, circuit designers, and test engineers. The selected candidate should have demonstrable subject matter expertise in semiconductor device physics and device development, with an emphasis on transistor devices.

This requisition may be filled as a Principal Microelectronics Device Engineer or Senior Principal Microelectronics Device Engineer

Basic Qualifications for Principal Microelectronics Device Engineer:

  • Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or other related STEM discipline with 5 years of relevant experience (3 years with a Master's degree and 0 with a PhD).

  • Experience with semiconductor device processing, including High Electron Mobility Transistor (HEMTs) and Heterojunction Bipolar Transistor (HBTs)

  • Expertise in semiconductor device physics

  • Proficiency in Design-of-Experiments methodologies

  • Ability to obtain and maintain a DoD Secret clearance

  • US Citizenship required

Basic Qualifications for Senior Principal Microelectronics Device Engineer:

  • Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or other related STEM discipline with 8 years of relevant experience (6 years with a Master's degree and 3 with a PhD).

  • Experience with semiconductor device processing, including High Electron Mobility Transistor (HEMTs) and Heterojunction Bipolar Transistor (HBTs)

  • Expertise in semiconductor device physics

  • Proficiency in Design-of-Experiments methodologies

  • Ability to obtain and maintain a DoD Secret clearance

  • US Citizenship required

Preferred Qualifications:

- Ph.D. degree in Electrical Engineering, Materials Engineering, or Physics

- Experience with MMIC design and fabrication

- Direct experience with GaN transistor development

- Demonstrated track record of applying scientific principles to advance device performance

- Experience with technology maturation and transition from R&D to manufacturing

- Excellent communication, interpersonal skills, and the ability to interface with all levels of employees and management

- Proven track record in leading multidisciplinary teams

- Ability to prioritize and manage tasks efficiently in a dynamic environment

- Demonstrated professional accomplishments and publication record related to semiconductor technology R&D and maturation

Primary Level Salary Range: $114,000.00 - $171,000.00Secondary Level Salary Range: $142,200.00 - $213,400.00The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions.Depending on the position, employees may be eligible for overtime, shift differential, and a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates.Northrop Grumman is an Equal Opportunity Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO and pay transparency statement, please visit http://www.northropgrumman.com/EEO. U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.

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About Northrop Grumman

Sourced by ZipRecruiter

At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work - and we have an insatiable drive to do what others think is impossible.

Industry

Space research administration

Company size

10,000+ Employees

Headquarters location

Falls Church, VA, US

Year founded

1939