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Internship Rf Power Amplifier Engineer Jobs in Crete, IL

Embedded Engineer

Chicago, IL · On-site

$135K - $178K/yr

Experience with electronic design (PCB, motor control, RF, power electronics, high speed, etc ... Engineering Blogs * Additional Career Opportunities #LI-Hybrid

Embedded Engineer

Chicago, IL · Hybrid

$135K - $178K/yr

Experience with electronic design (PCB, motor control, RF, power electronics, high speed, etc ... Engineering Blogs * Additional Career Opportunities #LI-Hybrid

... power of artificial intelligence. Launched in 2018, Clerkie began with an app, aiming to help the ... About the internship As the newest addition to Team Clerkie, this Software Engineer Intern will ...

Design and develop PCBs , including high-speed digital, analog, power electronics, and RF circuits. * Collaborate with mechanical and software engineers to integrate electrical systems into airframes ...

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Internship Rf Power Amplifier Engineer information

See Crete, IL salary details

$10

$20

$28

How much do internship rf power amplifier engineer jobs pay per hour?

As of Sep 3, 2026, the average hourly pay for internship rf power amplifier engineer in Crete, IL is $20.75, according to ZipRecruiter salary data. Most workers in this role earn between $17.50 and $23.03 per hour, depending on experience, location, and employer.

What is the difference between Internship Rf Power Amplifier Engineer vs Rf Power Amplifier Engineer?

AspectInternship Rf Power Amplifier EngineerRf Power Amplifier Engineer
QualificationsEnrolled in or recent graduate of relevant engineering programBachelor's or master's in electrical engineering or related field
Work EnvironmentInternship setting, supervised, entry-level tasksFull-time professional role, independent project work
ResponsibilitiesAssisting in design/testing, learning industry toolsDesign, develop, test RF power amplifiers independently
ExperienceLimited or no professional experienceSeveral years of relevant experience often preferred

In summary, an Internship Rf Power Amplifier Engineer is a temporary, entry-level position for students or recent graduates gaining industry experience, while an Rf Power Amplifier Engineer is a full-time professional responsible for designing and developing RF power amplifiers with more independence and expertise.

What job categories do people searching Internship Rf Power Amplifier Engineer jobs in Crete, IL look for?

The top searched job categories for Internship Rf Power Amplifier Engineer jobs in Crete, IL are:

What cities near Crete, IL are hiring for Internship Rf Power Amplifier Engineer jobs?

Cities near Crete, IL with the most Internship Rf Power Amplifier Engineer job openings:

$162.75 - $253.89/hr

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Job description

The Accelerator Systems Division (ASD) provides best-in-class operation, maintenance and upgrade of the Advanced Photon Source accelerators and supports users in doing outstanding science in a safe environment.

Responsibilities
  • Design, develop, construct, implement and maintain high‑power rf systems for particle accelerator applications utilizing solid‑state rf amplifier devices for power generation in the 10 MHz to 1 GHz frequency range.
  • Apply analytical methods and use circuit simulation software tools to design and optimize solid‑state rf power amplifier performance.
  • Design and implement interlock systems needed to protect high‑power rf components and systems.
  • Analyze rf system performance to provide fault analysis and improve operation reliability.
  • Act as lead engineer in troubleshooting high‑power rf systems and independently design and implement system improvements.
  • Plan and lead R&D programs for development related to high‑power rf systems and devices.
  • Independently perform complex electrical and electronics engineering analysis, troubleshoot and debug rf systems.
  • Formulate and implement maintenance and operating guidelines for SSA systems.
  • Provide engineering support to Operation and Analysis Group.
  • May be required to perform other duties as assigned.
Position Requirements

Bachelor's degree and 15+ years’ experience, Master's degree and 12+ years’ experience, PhD and 10+ years’ experience, or equivalent.

  • Experience in high‑power rf system design, construction, operation and maintenance, with emphasis on multi‑kilowatt solid‑state rf power amplifier technology.
  • A working knowledge of high‑power rf technology at frequencies between 10 MHz and 1,000 MHz, and hands‑on experience with LDMOS solid‑state rf power amplifiers.
  • Experience with high‑power rf components, including waveguide transmission systems, and devices such as ferrite circulators and isolators, rf power couplers, rf loads, rf power combiners/splitters, and directional couplers.
  • Operational knowledge of Multikilowatt rf amplifier systems.
  • Knowledge of understanding complex systems and identifying and isolating problems.
  • Ability to model Argonne’s core values of impact, safety, respect, integrity, and teamwork.
  • Interpersonal skills, oral and written communication skills, and ability to interact with people at all levels both within and outside the laboratory.
Preferred Knowledge, Skills, and Experience
  • Knowledge and experience with accelerating cavities and vacuum‑tube rf technology.
  • Operating experience with AC Power Distribution Systems for high‑power rf installations.

Job Family: Research Development (RD). Job Profile: Electrical/Electronics Engineering. Worker Type: Regular, Time Type: Full time. Pay range: $162,750.00 – $253,890.00.

Additionally, comprehensive benefits are part of the total rewards package.

As an equal employment opportunity employer, in accordance with our core values of impact, safety, respect, integrity and teamwork, Argonne National Laboratory commits to a safe and welcoming workplace that fosters collaborative scientific discovery and innovation. Argonne encourages all qualified applicants to apply. Argonne is committed to nondiscrimination and considers all qualified applicants without regard to any protected characteristic.

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