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Sic Epitaxy Jobs (NOW HIRING)

Vertical Semiconductor

Device Engineer

Somerville, MA · On-site

... GaN, SiC, or related technologies, at any career stage. Where you spend most of your time will ... Collaborate with epitaxy, process, packaging, and reliability teams on cross‑functional device ...

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Sic Epitaxy information

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$35K

$65.2K

$89.5K

How much do sic epitaxy jobs pay per year?

As of Sep 14, 2026, the average yearly pay for sic epitaxy in the United States is $65,243.00, according to ZipRecruiter salary data. Most workers in this role earn between $54,000.00 and $75,000.00 per year, depending on experience, location, and employer.

What is SiC epitaxy?

SiC epitaxy refers to the process of growing a thin, single-crystal layer of silicon carbide (SiC) on a substrate, usually also made of SiC. This method is essential in producing high-quality SiC materials used in advanced electronic devices, such as power semiconductors and LEDs. SiC epitaxy enhances the material's electrical properties, enabling higher efficiency and performance in demanding applications like electric vehicles and renewable energy systems.

What are the key skills and qualifications needed to thrive as a SiC epitaxy engineer?

To thrive as a SiC Epitaxy Engineer, you need a solid background in materials science, semiconductor physics, and process engineering, typically supported by a degree in electrical engineering, materials science, or a related field. Familiarity with epitaxial growth equipment (such as CVD reactors), cleanroom protocols, and data analysis software is crucial, along with knowledge of relevant quality standards. Strong problem-solving skills, attention to detail, and effective communication help professionals excel in troubleshooting and collaborating with cross-functional teams. These skills and qualities are essential to ensure high-quality SiC layers, process optimization, and the advancement of semiconductor device performance.

What are some common challenges faced by engineers working in SiC epitaxy, and how are they typically addressed?

Engineers in SiC epitaxy often encounter challenges such as controlling wafer uniformity, minimizing defects, and optimizing growth parameters for consistent material quality. Addressing these issues usually involves fine-tuning the chemical vapor deposition process, regularly calibrating equipment, and closely monitoring in-situ diagnostics. Collaboration with process engineers and quality control teams is essential to quickly identify and resolve process deviations, ensuring high-yield production of SiC wafers for power electronics and other applications.

What is the difference between Sic Epitaxy vs Silicon Epitaxy?

AspectSic EpitaxySilicon Epitaxy
Required CredentialsTechnical certifications in compound semiconductor fabricationTechnical certifications in silicon wafer processing
Work EnvironmentCleanrooms specializing in compound semiconductorsCleanrooms focused on silicon wafer production
Industry UsageSemiconductor devices for high-power and high-frequency applicationsStandard semiconductor devices like microchips and integrated circuits
Common Search/ComparisonYesYes

In summary, Sic Epitaxy involves depositing silicon carbide layers for specialized high-power applications, while Silicon Epitaxy focuses on silicon layer growth for general semiconductor manufacturing. Both roles require technical expertise but differ in materials and industry focus.

Infographic showing various Sic Epitaxy job openings in the United States as of September 2026, with employment types broken down into 95% Full Time, 4% Part Time, and 1% Contract. Highlights an 84% Physical, 2% Hybrid, and 14% Remote job distribution, with an average salary of $65,243 per year, or $31.4 per hour.

Principal SiC Device Technologist

Torrance, CA • On-site

Navitas Semiconductor
Semiconductor and Electronic Component Manufacturing • 51 - 200 employees
Learn more about Navitas Semiconductorexternal

$190K - $220K/yr

Full-time

Re-posted 7 days ago

Job description

Job Purpose:
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.
With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.
We are seeking a Principal SiC Device Technologist to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.
The Principal SiC Device Technologist drives the development and optimization of Navitas next-generation SiC power devices, such as MOSFETs, IGBTs and Schottky Barrier Diodes (SBDs) ranging from 1200 V to 10 kV and beyond. This role involves leading R&D efforts from concept to volume manufacturing, specializing in device physics, process integration, and reliability
Key Responsibilities and Duties:
  • Device Design and Optimization: Lead the simulation, design, and performance optimization of next-generation SiC power devices to improve efficiency, power density, and reliability.
  • Process Integration & Development: Define and optimize SiC epitaxy, fabrication, and process integration to enhance yield.
  • Technical Leadership: Drive the device technology roadmap, acting as a key technical liaison between design, fabrication, foundry, and packaging teams.
  • Characterization and Testing: Co-ordinate detailed electrical characterization, parameter extraction, and failure analysis of SiC devices.
  • Reliability & Qualification: Work with internal and external teams to define the strategy for technology qualification and ensure that new SiC technology platforms meet reliability standards.
  • TCAD Modeling: Improve predictive modeling by providing data for TCAD and SPICE model calibration.
  • Knowledge, Skills, Abilities, and Other Characteristics (KSAO's)
  • Strong analytical and problem-solving skills
  • Excellent technical communication and negotiation abilities
  • Comfortable working across cultures and global time zones
  • Strong knowledge of SiC design and fabrication methodologies
  • Familiarity with power manufacturing eco-system including vendors and OSATs
  • Experience with high-voltage and high-reliability applications
  • Leading by example
  • Ability to travel up to 25%

Required Qualifications
  • Degree in Electrical Engineering, Physics, or equivalent
  • Minimum 5 years of industrial experience in SiC power device development, characterization, and/or process integration.
  • Deep understanding of power semiconductor physics, particularly wide-bandgap devices (SiC, GaN).
  • Strong understanding of wide-bandgap (WBG) semiconductor material properties, device physics (especially SiC MOSFETs), and MOS interface traps.
  • Experience with scaling 150 mm to 200 mm power SiC technology

Preferred Qualifications
  • PhD or Masters in Electrical Engineering, Physics, or equivalent
  • 10 years of industrial experience in SiC power device development, characterization, and/or process integration
  • Demonstrated experience working with external foundries is preferred
  • Strong data analytics skills and exposure to machine learning for test optimization.
  • Strong understanding of wide-bandgap (WBG) semiconductor material properties, device physics (especially SiC MOSFETs), and MOS interface traps.

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