Photonic Device Engineer Jobs (NOW HIRING)

Compensation: $150,000 - $202,000 base salary with a 16% target annual bonus

Benefits: Comprehensive medical, dental, vision, 401(k), annual bonus, relocation assistance, and comprehensive employee benefits package

Work Authorization: Qualified candidates requiring a TN-1 visa or H-1B transfer are encouraged to apply. New H-1B sponsorship is not available for this opportunity.

A global leader in optical communications technology is seeking a Principal Design Engineer to lead the design and development of next‑generation high‑speed InGaAs/Indium Phosphide (InP) photodiodes used in advanced optical communication and sensing applications.

This is a highly technical individual contributor role focused on photodiode architecture, device simulation, wafer process development, characterization, and product qualification. Working alongside world‑class engineers, you’ll drive innovation from concept through production while helping develop the next generation of optoelectronic devices that power AI infrastructure, high‑speed networking, and advanced photonic technologies.

The ideal candidate combines deep technical expertise with a passion for innovation and enjoys solving complex semiconductor design challenges in a collaborative R&D environment.

• Lead the design and development of high-speed, high-sensitivity InGaAs/InP photodiodes from concept through production
• Define device architectures and performance targets to meet customer and market requirements
• Partner with epitaxial growth, process integration, and wafer fabrication teams to optimize device structures and manufacturing processes
• Perform device simulation, characterization, and failure analysis to improve speed, sensitivity, reliability, and manufacturability
• Support product qualification, reliability testing, and new product introduction activities
• Collaborate with product engineering teams on yield improvement and continuous process optimization
• Mentor engineers and provide technical leadership across multidisciplinary development teams
• Stay current on emerging photonic technologies and identify opportunities for future product innovation

• Ph.D. in Electrical Engineering, Physics, Materials Science, or a related discipline
• 10+ years of experience designing InP or GaAs photodiodes
• Strong background in optoelectronic device simulation and design
• Experience with InP or GaAs wafer processing and semiconductor fabrication
• Hands‑on experience with photodiode characterization, reliability testing, and product qualification
• Strong understanding of semiconductor device physics and optoelectronic materials
• Excellent analytical, troubleshooting, and cross‑functional communication skills
• Ability to lead technical projects from concept through production

• Experience designing other InP optoelectronic devices such as laser diodes
• Experience supporting semiconductor process integration and yield improvement initiatives
• Background working with contract manufacturing partners
• Experience performing device failure analysis and reliability investigations
• Previous technical leadership or mentoring experience
• Experience developing products for optical communications or photonics applications

• Opportunity to lead the development of next‑generation photodiode technology
• Work alongside globally recognized experts in photonics and semiconductor device engineering
• Join a growing business with significant investment in advanced optical technologies
• Highly visible technical leadership role with opportunities to influence future product direction
• Potential path into engineering management or broader technical leadership
• Collaborative culture that encourages innovation, ownership, and continuous learning
• Relocation assistance and a competitive compensation package including annual bonus