GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world's most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.
Summary of Role:
GlobalFoundries' RF Product Line is looking for engineers with industry experience in developing high performing Gallium Nitride device technologies for RF applications, and to drive innovative fab based technology development for leading edge solutions for a broad range of applications in Burlington, VT. Successful applicants will become a member of a broader center of excellence in RF technology development driving innovation across technology platforms. Engineers with a Masters or Ph. D. degree and over 8 years of industry R&D experience in Gallium Nitride or Wideband Gap Device technology are strongly preferred.
Essential Responsibilities:
This position offers the unique opportunity to develop innovative RF GaN technologies as a Process Integration Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation.
Primary responsibilities include:
developinginnovative process sequences and device structures that meet our customer's performance, reliability, yield, and cost objectives.
Expanded responsibilities include:
leading and driving teams and innovation, and leading interactions with various engineering teams across functions: device test and characterization, failure analysis, unit process module, reliability, manufacturing, and research organizations, tofacilitateand achieve program success.
Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Securityrequirementsand programs.
Education: Bachelor's degree in electrical engineering, chemical, materials science, or other relevant engineering or physical science discipline.
Preferred Qualifications:
Experience in GaN / Wide Bandgap device DC, AC, and RF test and characterization, as well as GaN HEMT device reliability.
Expected Salary Range
$107,400.00 - $204,500.00
The exact Salary will be determined based on qualifications, experience and location.
If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.
An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.
GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.
All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law