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Flash Memory Design Engineer Jobs (NOW HIRING)

Sandisk

Staff VLSI Design Engineer

Milpitas, CA · On-site

$147K - $251K/yr

With a rich history of groundbreaking innovations in Flash and advanced memory technologies, our ... We are looking for an experienced Staff Engineer to lead and deliver projects for our Memory Design ...

Sandisk

Staff VLSI Design Engineer

Milpitas, CA · On-site

With a rich history of groundbreaking innovations in Flash and advanced memory technologies, our ... We are looking for an experienced Staff Engineer to lead and deliver projects for our Memory Design ...

Sandisk

Staff VLSI Design Engineer

Milpitas, CA · On-site

With a rich history of groundbreaking innovations in Flash and advanced memory technologies, our ... We are looking for an experienced Staff Engineer to lead and deliver projects for our Memory Design ...

Resource Point LLC

Memory Design Engineer

Troy, MI · On-site

Memory Design Engineer Location: Ontario, Canada Duration: 6+ Months with possible extension Qualification Required: * Typically requires minimum of 2 to 5 years of experience in Memory Design with ...

Arm Limited

Memory Design Engineer

Austin, TX · On-site

$130K - $176K/yr

Contribute in all parts of the memory development flow, starting at design specification, circuit ... Master's in Electrical Engineering, Computer Engineering, or other relevant technical fields with ...

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Flash Memory Design Engineer information

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How much do flash memory design engineer jobs pay per hour?

As of Sep 10, 2026, the average hourly pay for flash memory design engineer in the United States is $49.97, according to ZipRecruiter salary data. Most workers in this role earn between $40.87 and $57.21 per hour, depending on experience, location, and employer.

What does a flash memory design engineer do?

A Flash Memory Design Engineer is responsible for designing, developing, and testing flash memory devices, such as NAND or NOR flash, which are widely used in consumer electronics, computers, and mobile devices. Their work involves circuit design, layout, simulation, and working closely with fabrication teams to ensure the memory devices meet performance, reliability, and manufacturing requirements. They also troubleshoot design issues and collaborate with firmware and systems engineers to optimize the integration of flash memory into various products.

What are some common challenges faced by flash memory design engineers during the product development cycle?

Flash Memory Design Engineers often encounter challenges such as managing trade-offs between speed, power consumption, and reliability while working within tight physical constraints. Ensuring data integrity over the memory's lifecycle and optimizing layouts for high-density integration are also frequent hurdles. Collaborating closely with verification, process, and firmware teams is essential to resolve these issues and to ensure the final product meets stringent performance and quality standards.

What are the key skills and qualifications needed to thrive as a flash memory design engineer, and why are they important?

To thrive as a Flash Memory Design Engineer, you need a strong background in electrical engineering, semiconductor device physics, and circuit design, typically supported by a bachelor's or master's degree in a related field. Proficiency with EDA tools such as Cadence or Synopsys, and familiarity with Verilog/VHDL, SPICE simulations, and semiconductor process technologies, are essential. Attention to detail, analytical thinking, and effective teamwork are crucial soft skills for success in this collaborative and highly technical field. These skills ensure the development of reliable, high-performance memory products and effective problem-solving in a rapidly evolving technology landscape.

What are popular job titles related to Flash Memory Design Engineer jobs?

For Flash Memory Design Engineer jobs, the most frequently searched job titles are:

Non-Volatile Memory Design Architecture Lead

San Jose, CA • On-site

Micron Technology, Inc
Semiconductor and Electronic Component Manufacturing • 10K+ employees
Learn more about Micron Technology, Incexternal

$128K - $168K/yr

Other

Re-posted 28 days ago

Micron Technology rating

8.6

Company rating: 8.6 out of 10

Based on 43 frontline employees who took The Breakroom Quiz

28th of 163 rated electronics manufacturers

Job description

Non-Volatile Memory Design Architecture Lead

As a Design Architecture Lead in Non-Volatile-Engineering NAND Flash design team at Micron Technology, Inc., your role will cover both pathfinding as well as execution of innovative non-volatile memory designs! You will work with and support the efforts of functional teams to innovate and evaluate key multi-functional features and architecture to ensure best in class memory products in terms of die size, performance, reliability and power. In this role, you are expected to participate in definition of simulation plans, environment setup, pass/fail criteria, and coverage analysis. You will also work closely with design team members during all phases of design from concept to production. In addition, you will actively participate in the design and quality methodology improvements across the department. You will also be responsible for assisting product engineers in post-silicon design validation, root cause analysis, and providing solutions!

Responsibilities and Duties
  • Innovate and architect innovative memory/storage solution for high performance and energy efficient systems
  • Identify and innovate new concepts and features based on customer requirements
  • Contributing to the development of new NAND Flash Memory by assisting with the overall design, layout, and optimization of Memory/Logic circuits
  • Drive multi-functional team in key features evaluation and recommend decision on architecture
  • Working with Marketing, Probe, Assembly, Test, Process Integration, and Product Engineering groups to ensure accurate manufacturability of product
  • Supervising and manage the full chip verification activities including planning, tracking, and criteria setting
  • Proactively solicit mentorship from Standards, CAD, modeling, and verification groups to ensure the design quality
  • Driving innovation into the future Memory generation with dynamic work environment
  • Stay abreast of new sophisticated technology and architecture trends in the market
Qualifications and Skills
  • 15+ years of proven experience in non-volatile memory design
  • Degree/Major: BS, MS or Ph.D in Electrical Engineering (or related fields)
  • Broad knowledge and experience in NAND Flash memory design is required
  • Proven knowledge of various logic, analog, and mixed signal circuit’s functionality on full chip level
  • Knowledge of circuit simulators such as XA, hspice and/or hsim/finesim, etc.
  • An understanding of semiconductor reliability issues including CHC, NBTI, stress and snapback, as well as Electromigration (EM) and IR analysis
  • An understanding of StarRC/Calibre parasitic extraction flow and capability to debug extraction issues
What Sets You Apart
  • Good communication skills with the ability to convey sophisticated technical concepts in verbal and written form
  • Ability to lead multi-functional team in a project environment
  • Ability to orchestrate AI tools adoption and deployment is highly desired

Job Profile(s): Semiconductor Design Eng MTS

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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